초록 ▼

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has bee

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

대표청구항 ▼

[ What is claimed is:] [1.] A gallium nitride-based III-V Group compound semiconductor device, comprising;a substrate having first and second major surfaces;a first semiconductor layer provided on the side of said first major surface of said substrate and comprising an n-type gallium nitride-based I

[ What is claimed is:] [1.] A gallium nitride-based III-V Group compound semiconductor device, comprising;a substrate having first and second major surfaces;a first semiconductor layer provided on the side of said first major surface of said substrate and comprising an n-type gallium nitride-based III-V Group compound semiconductor, said first semiconductor layer having a planar top shape with four corners;a second semiconductor layer provided on the side of said first major surface of said substrate and comprising a p-type gallium nitride-based III-V Group compound semiconductor, said second semiconductor layer having a planar top shape with four corners, in which a portion of said second semiconductor layer is removed to expose a portion of said first semiconductor layer;a first electrode layer provided on a portion of said first semiconductor layer corresponding to said removed portion of said second semiconductor layer;a light transmitting second electrode layer provided over a surface of said second semiconductor layer; anda wire bonding pad layer provided at one corner portion of said second electrode layer and electrically connected to said second electrode layer; rein said first electrode layer and said bonding pad are arranged on a diagonal line.