IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0425312
(1999-10-25)
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발명자
/ 주소 |
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출원인 / 주소 |
- Taiwan Semiconductor Manufacturing Company, TWX
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
41 인용 특허 :
24 |
초록
▼
A process sequence used to form a gold wire bond, to an extended aluminum based structure, which in turn overlays a copper damascene structure, has been developed. The process features the creation of an extended aluminum based structure, used to accept the gold wire bond, thus reducing the risk of
A process sequence used to form a gold wire bond, to an extended aluminum based structure, which in turn overlays a copper damascene structure, has been developed. The process features the creation of an extended aluminum based structure, used to accept the gold wire bond, thus reducing the risk of increased interface resistance, sometimes encountered when gold wire is directly bonded to copper. The process also features the creation of dummy aluminum based structures, used to increase the roughens of the surface topography, allowing improved adhesion between an overlying molding substance, used for passivation purposes, and the underlying semiconductor chip, to be realized.
대표청구항
▼
[ What is claimed is:] [1.] A method of forming a wire bond to an underlying metal structure, on a semiconductor substrate, comprising the steps of:forming a damascene metal structure, in a first insulator layer, on a semiconductor substrate, resulting in a smooth, top surface topography, comprised
[ What is claimed is:] [1.] A method of forming a wire bond to an underlying metal structure, on a semiconductor substrate, comprising the steps of:forming a damascene metal structure, in a first insulator layer, on a semiconductor substrate, resulting in a smooth, top surface topography, comprised of the top surface of said damascene metal structure, and the top surface of said first insulator layer;forming a first aluminum based structure, overlying said damascene metal structure, and forming a second aluminum based structure, overlying the top surface of a portion of said first insulator layer, increasing the roughness of said top surface topography;depositing a composite insulator layer;forming an opening in said composite insulator layer, exposing a portion of the top surface of said first aluminum based structure;forming a wire bond to a region of said first aluminum based structure, exposed in said opening, in said composite insulator layer; andapplying a molding substance, surrounding said wire bond, overlying said first aluminum based structure, and said second aluminum based structure, and completely filling space between said first and second aluminum based structures.
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