초록 ▼

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce to

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

대표청구항 ▼

[ What is claimed is:] [1.] A substrate processing system comprising:a processing chamber;a gas delivery system configured to deliver a first process gas to said processing chamber;a heating system, said heating system including a heater capable of holding a wafer and capable of heating to a selecte

[ What is claimed is:] [1.] A substrate processing system comprising:a processing chamber;a gas delivery system configured to deliver a first process gas to said processing chamber;a heating system, said heating system including a heater capable of holding a wafer and capable of heating to a selected temperature;a vacuum system configured to maintain a selected pressure within said processing chamber;a controller configured to control said gas delivery system, said heating system, and said vacuum system; anda memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said substrate processing system, said computer-readable program including:a first set of computer instructions for controlling said gas delivery system to introduce said first process gas including oxygen, silicon, and dopants, during a first time period into said processing chamber to form a doped silicon oxide glass layer, wherein said first set of computer instructions includes:a first subset of computer instructions for controlling said vacuum system to maintain a pressure of between about 100-760 torr within said processing chamber during said first time period; anda second set of computer instructions for controlling said heating system to perform a heating step at a temperature of between about 900-1050.degree. C. on said doped silicon oxide layer during a second time period, said doped silicon oxide layer to be removed after said second time period.