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Method and apparatus for bonding using brazing material 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B23K-009/00
출원번호 US-0151867 (1998-09-11)
우선권정보 JP-0309440 (1993-12-09)
발명자 / 주소
  • Takuya Miyakawa,JPX
  • Yoshiaki Mori,JPX
  • Yohei Kurashima,JPX
  • Makoto Anan,JPX
출원인 / 주소
  • Seiko Epson Corporation, JPX
대리인 / 주소
    Stroock & Stroock & Lavan LLP
인용정보 피인용 횟수 : 17  인용 특허 : 19

초록

A method and apparatus for bonding components with a brazing material is described in which atmospheric plasma with active species is created by gas discharge generated in a gas capable of discharge at or about atmospheric pressure, and a portion of a component is exposed to the atmospheric plasma,

대표청구항

[ We claim:] [1.] A method of bonding components together using a brazing material., comprising the steps of:providing a gas capable of discharge;generating discharge in said gas capable of discharge at or about atmospheric pressure thereby creating an atmospheric plasma having active species;exposi

이 특허에 인용된 특허 (19)

  1. Liu Yung S. (Schenectady NY) Grubb Willard T. (Schenectady NY), Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides.
  2. Tanisaki Tatsuzo (Onomichi JPX), Apparatus for atmospheric plasma treatment of a sheet-like structure.
  3. Tsai Chin-Chi (Oak Ridge TN) Haselton Halsey H. (Knoxville TN), Coupled microwave ECR and radio-frequency plasma source for plasma processing.
  4. Kumihashi Takao (Musashino JPX) Tsujimoto Kazunori (Higashiyamato JPX) Tachi Shinichi (Sayama JPX), Dry etching apparatus and method.
  5. Ishida Tomoaki (Hyogo JPX), Dry etching method of copper or copper alloy interconnection layer employing plasma of an iodine compound.
  6. Grewal Virinder S. (Fishkill NY) Laux Volker B. (Munich DEX), Etch chamber having three independently controlled electrodes.
  7. Haigh John (Ipswich GB2) Aylett Martin R. (Felixstowe GB2), Etching method.
  8. Bobbio Stephen M. (Wake Forest NC) Koopman Nicholas G. (Raleigh NC) Nangalia Sundeep (Raleigh NC), Fluxless soldering sample pretreating system.
  9. Blackwood Robert S. (Lubbock TX) Biggerstaff Rex L. (Lubbock TX) Clements L. Davis (Lincoln NE) Cleavelin C. Rinn (Lubbock TX), Gaseous process and apparatus for removing films from substrates.
  10. Hynecek Jaroslav (Richardson TX), Hydrogen iodide etch of tin oxide.
  11. Pedder David J. (Warks) Wort Christopher J. (Northants) Pickering Kim L. (Northampton GBX), Metal surface cleaning processes.
  12. Takuya Miyakawa,JPX ; Yoshiaki Mori,JPX ; Yohei Kurashima,JPX ; Makoto Anan,JPX, Method and apparatus for bonding using brazing material at approximately atmospheric pressure.
  13. Kusano Yukihiro (20-11 ; Takaidohigashi 2-chome Tokorozawa JPX) Yoshikawa Masato (20-11 ; Takaidohigashi 2-chome Kodaira JPX) Naito Kazuo (20-11 ; Takaidohigashi 2-chome Kawasaki JPX) Okazaki Satiko , Method and apparatus for surface treating an axially symmetric substrate at atmosphere pressure.
  14. Tsukamoto Katsuhiro (Hyogo JPX) Tokui Akira (Hyogo JPX), Method for forming a thin layer on a semiconductor substrate and apparatus therefor.
  15. Schuurmans Hubertus J. A. (Amsterdam NLX) Werner Jan (Amsterdam NLX) Schram Daniel C. (Eindhoven NLX) Kroesen Gerardus M. W. (Eindhoven NLX), Method for plasma surface treating and preparation of membrane layers.
  16. Kusano Yukihiro (No. 20-11 ; Takaido Higashi 2-chome Tokorozawa JPX) Yoshikawa Masato (No. 20-11 ; Takaido Higashi 2-chome Kodaira JPX) Naito Kazuo (No. 20-11 ; Takaido Higashi 2-chome Kawasaki JPX) , Method for preparing a rubber-based composite material.
  17. Nishiwaki Atsushi (1-11 ; Funakoshi-cho 2-chome Chuo-ku ; Osaka JPX) Ikemiya Norihito (Takatsuki JPX) Uchiyama Hiroshi (Hirakata JPX) Inagaki Hideo (Hirakata JPX) Sawada Yasuo (Tokyo JPX) Ogino Kazum, Method for the surface treatment of a metal by atmospheric pressure plasma.
  18. Hanawa Hiroji (Santa Clara CA), Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semi.
  19. Maruyama Takahiro (Hyogo JPX), Plasma treatment apparatus.

이 특허를 인용한 특허 (17)

  1. Dong,Chun Christine; Karwacki, Jr.,Eugene Joseph; Patrick,Richard E., Addition of Dto Hto detect and calibrate atomic hydrogen formed by dissociative electron attachment.
  2. Dong,Chun Christine; McDermott,Wayne Thomas; Patrick,Richard E.; Schwarz,Alexander, Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation.
  3. Dong, Chun Christine; McDermott, Wayne Thomas; Patrick, Richard E.; Schwarz, Alexander, Apparatus and method for removal of surface oxides via fluxless technique involving electron attachment and remote ion generation.
  4. Dong,Chun Christine; McDermott,Wayne Thomas; Patrick,Richard E.; Schwarz,Alexander, Apparatus and method for removal of surface oxides via fluxless technique involving electron attachment and remote ion generation.
  5. Dong, Chun Christine; McDermott, Wayne Thomas; Patrick, Richard E.; Schwarz, Alexander, Apparatus for removal of surface oxides via fluxless technique involving electron attachment and remote ion generation.
  6. Tsuji, Hiroyuki; Inoue, Kazuhiro, Atmospheric pressure plasma, generating method, plasma processing method and component mounting method using same, and device using these methods.
  7. Kariyazaki, Syuuichi; Honda, Hirokazu, Method for manufacturing semiconductor devices.
  8. Schmitt, Stephen E.; Peterson, Chris; Rosland, Mark; Trenhalle, Mike, Method for printing a high durability and/or resolution item.
  9. Serguei Goloviatinskii CH; Stanislav Begounov CH, Method for treating the surface of a material or an object and implementing device.
  10. Shinriki,Hiroshi; Aoyama,Shintaro, Method of removing oxide film on a substrate with hydrogen and fluorine radicals.
  11. Daniel Gelbart CA, Method of surface preparation using plasma in air.
  12. Bendat, Zvi; Chou, Henry; Powell, Lionel, Process and apparatus for mounting semiconductor components to substrates and parts therefor.
  13. Tischler, Friedrich, Process for MSG-soldering and use of a shielding gas.
  14. Yamasaki, Hirofumi; Shimano, Kiyoharu; Takakura, Hiroshi, Reflow apparatus.
  15. Ellis, Timothy W.; Murdeshwar, Nikhil; Eshelman, Mark A.; Rheault, Christian, Semiconductor copper bond pad surface protection.
  16. Shabtay,Yoram Leon, Thermal spray application of brazing material for manufacture of heat transfer devices.
  17. Shabtay,Yoram Leon, Thermal spray application of brazing material for manufacture of heat transfer devices.
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