초록 ▼

A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxyg

A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxygen concentration which is provided on a backing substrate of which at least the surface is made of an insulating material. The backing substrate is provided so that the semiconductor device gets mechanical destructive strength. The insulating material is provided so that some particles never transfers from the backing substrate to the semiconductor film. The silicon film has-low oxygen concentration so that the lifetime of a minor carrier lengthens.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor integrated circuit device comprising: a supporting substrate; an insulating film formed on the supporting substrate; a monocrystalline silicon thin film disposed on the insulating film and comprising a monocrystalline silicon wafer having less than 1.times

[ What is claimed is:] [1.] A semiconductor integrated circuit device comprising: a supporting substrate; an insulating film formed on the supporting substrate; a monocrystalline silicon thin film disposed on the insulating film and comprising a monocrystalline silicon wafer having less than 1.times.10.sup.17 atoms/cm.sup.3 in oxygen concentration, the wafer being bonded to the insulating film and thinned to less than 200 .mu.m in thickness; and a photodetector formed in the monocrystalline silicon thin film; wherein the insulating film has a smaller impurity diffusion coefficient than the supporting substrate and a sufficient thickness to prevent oxygen educed from the supporting substrate from diffusing into the monocrystalline silicon thin film, the monocrystalline silicon wafer comprises one of a floating zone substrate and an epitaxial substrate and has a P.sup.+ impurity layer formed proximate an interface with the insulating film, and an interface between the insulating film and at least one of the supporting substrate and the monocrystalline silicon thin film serves as a reflective surface to reflect back light that has passed through a detecting region of the photodetector to increase the sensitivity of the photodetector.