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Silicon carbide barrier layers for porous low dielectric constant materials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H07L-023/485
  • H01L-021/4763
출원번호 US-0383753 (1999-08-26)
발명자 / 주소
  • Merchant Sailesh Mansinh
  • Misra Sudhanshu
  • Roy Pradip Kumar
출원인 / 주소
  • Lucent Technologies Inc.
인용정보 피인용 횟수 : 39  인용 특허 : 15

초록

Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnec

대표청구항

[ What is claimed is:] [1.] A semiconductor comprising:a substrate having a conductor;a dielectric formed on the substrate, said dielectric made from a porous material having a via extending through the dielectric and exposing a surface of the conductor;a silicon carbide-containing coating deposited

이 특허에 인용된 특허 (15)

  1. Morimoto Kiyoshi (Mobara JPX) Takagi Toshinori (Nagaokakyo JPX), Boron nitride film and process for preparing same.
  2. Hayakawa Yukihiro (Atsugi JPX) Kawasumi Yasushi (Fujisawa JPX) Makino Kenji (Yokohama JPX) Kataoka Yuzo (Atsugi JPX), Chemical vapor deposition method.
  3. Metter Robert Howard ; Hathcock Joseph David ; Winsek Peter M., High purity carbon/carbon composite useful as a crucible susceptor.
  4. Lu Jiong-Ping ; Jin Changming, Integrated circuit dielectric and method.
  5. Lee Jean Ling ; Ma Yi ; Merchant Sailesh Mansinh, Integrated circuit fabrication.
  6. Harris Christopher (Sollentuna SEX) Konstantinov Andrei (Linkoping SEX) Janzen Erik (Borensberg SEX), Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step.
  7. Hong Qi-Zhong ; Hsu Wei-Yung ; Jeng Shin-puu, Method for producing barrier-less plug structures.
  8. Johnson D. Lynn (Wilmette IL) Jennings Hamlin M. (Wilmette IL) Spotz Mark S. (Chicago IL) Skamser Daniel J. (Northbrook IL), Method of making chemical vapor infiltrated composites.
  9. Suzuki Shogo (Yamato JPX), Method of manufacturing composite ceramics of silicon nitride and zirconia.
  10. Bates Carl H. (Worcester MA), Non-porous diffusion furnace components.
  11. Parrillo Louis C. (Austin TX) Klein Jeffrey L. (Austin TX), Process for fabricating a semiconductor device having an improved metal interconnect structure.
  12. Gelatos Avgerinos V. (Austin TX) Fiordalice Robert W. (Austin TX), Process for forming copper interconnect structure.
  13. French James E., Process for production of low dielectric ceramic composites.
  14. French James E., Process for production of low dielectric ceramic composites.
  15. Wong Lawrence D. ; Banerjee Indrajit ; Towie Steven, Unique .alpha.-C:N:H/.alpha.-C:N.sub.x film liner/barrier to prevent fluorine outdiffusion from .alpha.-FC chemical vapo.

이 특허를 인용한 특허 (39)

  1. Dimeo, Jr., Frank; Chen, Philip S. H.; Neuner, Jeffrey W.; Welch, James; Stawasz, Michele; Baum, Thomas H.; King, Mackenzie E.; Chen, Ing-Shin; Roeder, Jeffrey F., Apparatus and process for sensing fluoro species in semiconductor processing systems.
  2. Dimeo, Jr.,Frank; Chen,Philip S. H.; Neuner,Jeffrey W.; Welch,James; Stawacz,Michele; Baum,Thomas H.; King,Mackenzie E.; Chen,Ing Shin; Roeder,Jeffrey F., Apparatus and process for sensing fluoro species in semiconductor processing systems.
  3. Dimeo, Jr.,Frank; Chen,Philip S. H.; Neuner,Jeffrey W.; Welch,James; Stawasz,Michele; Baum,Thomas H.; King,Mackenzie E.; Chen,Ing Shin; Roeder,Jeffrey F., Apparatus and process for sensing fluoro species in semiconductor processing systems.
  4. Yu,Yongsik; Gupta,Atul; Billington,Karen; Carris,Michael; Crew,William; Mountsier,Thomas W., Boron-doped SIC copper diffusion barrier films.
  5. Huang, Richard J.; Wang, Pin-Chin C.; Erb, Darrell M., Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration.
  6. Varadarajan, Bhadri N.; Gong, Bo; Yuan, Guangbi; Gui, Zhe; Lai, Fengyuan, Densification of silicon carbide film using remote plasma treatment.
  7. Yu, Yongsik; Subramonium, Pramod; Fang, Zhiyuan; Henri, Jon; Apen, Elizabeth; Vitkavage, Dan, Diffusion barrier and etch stop films.
  8. Yu,Yongsik; Billington,Karen; Hepburn,Robert; Carris,Michael; Crew,William, Film for copper diffusion barrier.
  9. Rangarajan, Vishwanathan; Antonelli, George Andrew; Banerji, Ananda; Van Schravendijk, Bart, Hardmask materials.
  10. Rangarajan, Vishwanathan; Antonelli, George Andrew; Banerji, Ananda; van Schravendijk, Bart, Hardmask materials.
  11. Fu, Haiying; Wong, Ka Shun; Tang, Xingyuan; Huang, Judy Hsiu-Chih; van Schravendijk, Bart Jan, Hermetic silicon carbide.
  12. Yu, Yongsik; Billington, Karen; Tang, Xingyuan; Fu, Haiying; Carris, Michael; Crew, William, Low-K SiC copper diffusion barrier films.
  13. Yu,Yongsik; Gupta,Atul; Billington,Karen; Carris,Michael; Crew,William; Mountsier,Thomas W., Low-k B-doped SiC copper diffusion barrier films.
  14. Yu, Yongsik; Billington, Karen; Tang, Xingyuan; Fu, Haiying; Carris, Michael; Crew, William, Low-k SiC copper diffusion barrier films.
  15. Yu,Yongsik; Billington,Karen; Tang,Xingyuan; Fu,Haiying; Carris,Michael; Crew,William, Low-k SiC copper diffusion barrier films.
  16. Yu, Yongsik; Gupta, Atul; Billington, Karen; Carris, Michael; Crew, William; Mountsier, Thomas W., Low-k b-doped SiC copper diffusion barrier films.
  17. Fei Wang ; Lynne A. Okada ; Ramkumar Subramanian ; Calvin T. Gabriel, Method for making a slot via filled dual damascene low k interconnect structure without middle stop layer.
  18. Wei,Jun; Wong,Stephen Chee Khuen; Wu,Yongling; Ng,Fern Lan, Method of fabricating microelectromechanical system structures.
  19. Wei,Jun; Wong,Stephen Chee Khuen; Wu,Yongling; Ng,Fern Lan, Method of fabricating microelectromechanical system structures.
  20. Varadarajan, Bhadri N., Method to obtain SiC class of films of desired composition and film properties.
  21. Chattopadhyay, Kaushik; Fox, Keith; Mountsier, Tom; Wu, Hui-Jung; van Schravendijk, Bart; Branshaw, Kimberly, Methods for reducing UV and dielectric diffusion barrier interaction.
  22. Chen, Ling; Ganguli, Seshadri; Cao, Wei; Marcadal, Christophe, Multi-step barrier deposition method.
  23. Dimeo, Jr.,Frank; Chen,Philip S. H.; Chen,Ing Shin; Neuner,Jeffrey W.; Welch,James, Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same.
  24. Sun, Shi-Chung; Tsai, Hao-Yi, Optimized TaCN thin film diffusion barrier for copper metallization.
  25. Antonelli, George Andrew; Hollister, Alice; Reddy, Sirish, Oxygen-containing ceramic hard masks and associated wet-cleans.
  26. Wu, Hui-Jung; Shafi, Kimberly; Chattopadhyay, Kaushik; Fox, Keith; Mountsier, Tom; Dixit, Girish; van Schravendijk, Bart; Apen, Elizabeth, Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties.
  27. Varadarajan, Bhadri, Remote plasma based deposition of SiOC class of films.
  28. Gopalraja, Praburam; Fu, Jianming; Tang, Xianmin; Forster, John C.; Kelkar, Umesh, Self-ionized and capacitively-coupled plasma for sputtering and resputtering.
  29. Gopalraja,Praburam; Fu,Jianming; Tang,Xianmin; Forster,John C.; Kelkar,Umesh, Self-ionized and capacitively-coupled plasma for sputtering and resputtering.
  30. Ding, Peijun; Tao, Rong; Xu, Zheng; Lubben, Daniel C.; Rengarajan, Suraj; Miller, Michael A.; Sundarrajan, Arvind; Tang, Xianmin; Forster, John C.; Fu, Jianming; Mosely, Roderick C.; Chen, Fusen; Gopalraja, Praburam, Self-ionized and inductively-coupled plasma for sputtering and resputtering.
  31. Ding, Peijun; Tao, Rong; Xu, Zheng; Lubben, Daniel C.; Rengarajan, Suraj; Miller, Michael A.; Sundarrajan, Arvind; Tang, Xianmin; Forster, John C.; Fu, Jianming; Mosely, Roderick C.; Chen, Fusen; Gopalraja, Praburam, Self-ionized and inductively-coupled plasma for sputtering and resputtering.
  32. Ding, Peijun; Tao, Rong; Xu, Zheng; Lubben, Daniel C.; Rengarajan, Suraj; Miller, Michael A.; Sundarrajan, Arvind; Tang, Xianmin; Forster, John C.; Fu, Jianming; Mosely, Roderick C.; Chen, Fusen; Gopalraja, Praburam, Self-ionized and inductively-coupled plasma for sputtering and resputtering.
  33. Wang, Fei; Okada, Lynne A.; Subramanian, Ramkumar; Gabriel, Calvin T., Slot via filled dual damascene interconnect structure without middle etch stop layer.
  34. Yu, Yongsik; van Schravendijk, Bart J.; Shankar, Nagraj; Varadarajan, Bhadri N., Staircase encapsulation in 3D NAND fabrication.
  35. Wong,Lawrence D., Structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures.
  36. Chen, Ling; Ganguli, Seshadri; Cao, Wei; Marcadal, Christophe, Tantalum barrier layer for copper metallization.
  37. Chen, Bi-Trong; Li, Lain-Jong; Jang, Syun-Ming; Ku, Shu E; Bao, Tien I.; Li, Lih-Ping, Thin interface layer to improve copper etch stop.
  38. Chen, Bi-Trong; Li, Lain-Jong; Jang, Syun-Ming; Ku, Shu E; Bao, Tien I.; Li, Lih-Ping, Thin interface layer to improve copper etch stop.
  39. You, Lu; Wang, Fei; Ngo, Minh Van, Use of sic for preventing copper contamination of dielectric layer.
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