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Planarizing technique for multilayered substrates 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0089931 (1998-06-03)
발명자 / 주소
  • Henley Francois J.
  • Cheung Nathan
출원인 / 주소
  • Silicon Genesis Corporation
대리인 / 주소
    Townsend and Townsend and Crew LLP
인용정보 피인용 횟수 : 128  인용 특허 : 33

초록

The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and an insulating layer 13 formed overlying the

대표청구항

[ What is claimed is:] [1.] A method for fabricating a substrate, said method comprising steps of:providing a substrate comprising a thickness of material having a non-uniform surface, said thickness of material being implant damaged and having a substantially planar interface region at a selected d

이 특허에 인용된 특허 (33)

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