초록 ▼

A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consi

A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

대표청구항 ▼

[ I claim:] [1.] An ion implanting device for implanting a shallow-p-type region in a semiconductor substrate comprising:an ion source comprising a compound of a composite dopant represented by a symbol A.sub.x Cy wherein A represents an electron acceptor having a solid solubility in said substrate

[ I claim:] [1.] An ion implanting device for implanting a shallow-p-type region in a semiconductor substrate comprising:an ion source comprising a compound of a composite dopant represented by a symbol A.sub.x Cy wherein A represents an electron acceptor having a solid solubility in said substrate which is higher than a dopant concentration for said p-type region and C represents a chemical element of said substrate, where x and y are real numbers; andan evaporating and ionization means for evaporating and ionizing said ion source into an implanting ion beam for implanting said semiconductor substrate.