초록 ▼

A process is disclosed for producing non-evaporable getter materials having high porosity and improved gas sorption rates. The process includes mixing together a metallic getter element, a getter alloy and a solid organic compound, all three components being in the form of powders having specific pa

A process is disclosed for producing non-evaporable getter materials having high porosity and improved gas sorption rates. The process includes mixing together a metallic getter element, a getter alloy and a solid organic compound, all three components being in the form of powders having specific particle sizes. The mixture is subjected to a compression of less than about 1000 kg/cm.sup.2 and is sintered at a temperature between about 900.degree. C. and about 1200.degree. C. for a period between about 5 minutes and about 60 minutes. The getter material thus obtained is used to produce getter bodies shaped as pellets, sheets or discs having better mechanical strength than similar bodies of other getter material having comparable porosity.

대표청구항 ▼

[ What is claimed:] [1.] A method for producing a semiconductor device under a high vacuum, comprising the steps of:a) producing a high vacuum in a semiconductor processing chamber using a non-evaporable getter material prepared according to a process including the steps of:i) providing a powder mix

[ What is claimed:] [1.] A method for producing a semiconductor device under a high vacuum, comprising the steps of:a) producing a high vacuum in a semiconductor processing chamber using a non-evaporable getter material prepared according to a process including the steps of:i) providing a powder mixture including:a) a metallic getter element having a grain size smaller than about 70 .mu.m;b) at least one getter alloy having a grain size smaller than about 40 .mu.m; andc) an organic component which is solid at room temperature and has the characteristic of evaporating at 300.degree. C. substantially without leaving a residue on the grains of said metallic getter element and said getter alloy when said metallic getter element, said getter alloy and said organic component are sintered to form said getter body; and wherein said organic component has a particle size distribution such that about half of its total weight consists of grains of size smaller than about 50 .mu.m the remainder of said grains of said organic component having a size between about 50 .mu.m and about 150 .mu.m;ii) subjecting said powder mixture to compression at a pressure less than about 1000 kg/cm.sup.2 to form a compressed powder mixture; andiii) sintering said compressed powder mixture at a temperature between about 900.degree. C. and about 1200.degree. C. for a period of between about 5 minutes and about 60 minutes wherein said organic component evaporates from said powder mixture substantially without leaving a residue on said grains of said metallic getter element and said getter alloy to form thereby a network of large and small pores in said getter body; andb) processing a semiconductor wafer in said processing chamber to produce at least one semiconductor device.