초록 ▼

A semiconductor device such as a light emitting semiconductor device comprising a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively by way of the mask layer, with each of the mask layer and the selective growing layer being disposed by two or

A semiconductor device such as a light emitting semiconductor device comprising a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively by way of the mask layer, with each of the mask layer and the selective growing layer being disposed by two or more layers alternately. The semiconductor device is manufactured by a step of laminating on a substrate a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively way of a mask layer, each by two or more layers alternately and a subsequent step of laminating semiconductor layers thereon. Threading dislocations in the underlying layer are interrupted by the first mask layer and the second mask layer and do not propagate to the semiconductor layer. The density of the threading dislocations is lowered over the entire surface and the layer thickness can be reduced.

대표청구항 ▼

[ What is claimed is:] [11.] A light emitting semiconductor device in which a first conduction type cladding layer, an active layer and a second conduction type cladding layer each comprising a semiconductor are at least laminated successively on the substrate, whereina mask layer in which opening a

[ What is claimed is:] [11.] A light emitting semiconductor device in which a first conduction type cladding layer, an active layer and a second conduction type cladding layer each comprising a semiconductor are at least laminated successively on the substrate, whereina mask layer in which opening areas are formed and a selective growing layer comprising a semiconductor which is grown selectively by way of the mask layer, with the mask layer and the selective growing layer being disposed each by two or more layers alternately, are laminated between the substrate and the first conduction type cladding layer.