초록 ▼

The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting ele

The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

대표청구항 ▼

[ What is claimed is:] [1.] A method for electrolytic plating of a metal on a semiconductive substrate, comprising:connecting the semiconductive substrate to a negative terminal of an electrical power source;disposing the semiconductive substrate and an anode in a solution comprising metal ions and

[ What is claimed is:] [1.] A method for electrolytic plating of a metal on a semiconductive substrate, comprising:connecting the semiconductive substrate to a negative terminal of an electrical power source;disposing the semiconductive substrate and an anode in a solution comprising metal ions and less than about 0.05 molar concentration of a supporting electrolyte; andelectrodepositing the metal onto the semiconductive substrate from the metal ions in the solution.