초록 ▼

A method for forming a dual damascene structure using low-dielectric constant materials is disclosed. The method includes providing a substrate first. A first dielectric layer is formed on the substrate, and the first dielectric layer is then cured to form a stop layer. Then, a second dielectric lay

A method for forming a dual damascene structure using low-dielectric constant materials is disclosed. The method includes providing a substrate first. A first dielectric layer is formed on the substrate, and the first dielectric layer is then cured to form a stop layer. Then, a second dielectric layer is formed on the stop layer, and the second dielectric layer is cured to form an insulating layer. The insulating layer, the second dielectric layer, the stop layer, and the first dielectric layer are etched to form a via hole, and the insulating layer and the second dielectric layer is then etched to form a trench line.

대표청구항 ▼

[ What is claimed is:] [12.] A method for forming a dual damascene structure, said method comprising:providing a substrate having a conductive layer formed thereon;forming a first dielectric layer on said substrate;curing said first dielectric layer to form a first insulating layer;forming a second

[ What is claimed is:] [12.] A method for forming a dual damascene structure, said method comprising:providing a substrate having a conductive layer formed thereon;forming a first dielectric layer on said substrate;curing said first dielectric layer to form a first insulating layer;forming a second dielectric layer on said first insulating layer;curing said second dielectric layer to form a second insulating layer;forming a first photoresist layer on said second dielectric layer and transferring a hole pattern to said first photoresist layer;removing said second insulating layer, second dielectric layer, first insulating layer, and first dielectric layer to form a via hole;forming a second photoresist layer on said second dielectric layer and transferring a line pattern to said second photoresist layer;removing said second dielectric layer to form a trench line;depositing a conformal barrier layer;depositing a metal layer to fill said via hole and trench line; andremoving said excess metal layer.