초록 ▼

A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap en

A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor laser of double hetero junction structure comprising:an active layer;an n-type layer and a p-type layer, sandwiching said active layer, a band gap energy of said n-type layer and said p-type layer being larger than that of said active layer and a refractiv

[ What is claimed is:] [1.] A semiconductor laser of double hetero junction structure comprising:an active layer;an n-type layer and a p-type layer, sandwiching said active layer, a band gap energy of said n-type layer and said p-type layer being larger than that of said active layer and a refractive index of said n-type layer and said p-type layer being smaller than that of said active layer;wherein said n-type and p-type layers comprises at least two layers, respectively; wherein in said active layer side of said n-type and p-type layers is provided a low refractive index layer formed of a material of small refractive index, in other portion of the electric current path of said n-type layer and p-type layer is provided a low resistance layer having smaller electric resistance than that of said low refractice index layer.