초록 ▼

A surface inspection system and method is provided which detects defects such as particles or pits on the surface of a workpiece, such as a silicon wafer, and also distinguishes between pit defects and particle defects. The surface inspection system comprises an inspection station for receiving a wo

A surface inspection system and method is provided which detects defects such as particles or pits on the surface of a workpiece, such as a silicon wafer, and also distinguishes between pit defects and particle defects. The surface inspection system comprises an inspection station for receiving a workpiece and a scanner positioned and arranged to scan a surface of the workpiece at the inspection station. The scanner includes a light source arranged to project a beam of P-polarized light and a scanner positioned to scan the P-polarized light beam across the surface of the workpiece. The system further provides for detecting differences in the angular distribution of the light scattered from the workpiece and for distinguishing particle defects from pit defects based upon these differences.

대표청구항 ▼

[ What is claimed is:] [1.] A surface inspection method for distinguishing between particle defects and pit defects on a surface of a workpiece, said method comprising:receiving the workpiece at an inspection station;scanning the surface of the workpiece at the inspection station with a beam of P-po

[ What is claimed is:] [1.] A surface inspection method for distinguishing between particle defects and pit defects on a surface of a workpiece, said method comprising:receiving the workpiece at an inspection station;scanning the surface of the workpiece at the inspection station with a beam of P-polarized light at an angle of incidence oblique to the workpiece surface;collecting light scattered from the surface of the workpiece at the inspection station at a first central zone, and at least at a second oblique zone offset angularly from said first zone;converting the collected light components from said zones into respective signals representative of light scattered into said zones;comparing said signals; anddetermining whether a defect is one of a pit and a particle based at least in part on said comparing.