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Crystal ion-slicing of single-crystal films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-031/22
출원번호 US-0025114 (1998-02-17)
발명자 / 주소
  • Levy Miguel
  • Osgood
  • Jr. Richard M.
출원인 / 주소
  • The Trustees of Columbia University in the City of New York
대리인 / 주소
    Baker Botts LLP
인용정보 피인용 횟수 : 57  인용 특허 : 5

초록

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal s

대표청구항

[ What is claimed is:] [1.] A method for detaching a single-crystal metal oxide film from a metal oxide crystal structure, said method comprising the steps of:implanting ions into said crystal structure to form a damage layer within said crystal structure at an implantation depth below a top surface

이 특허에 인용된 특허 (5)

  1. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.
  2. Cook Melvin S. (43 Westerly Rd. Saddle River NJ 07458), Method of peeling thin films using directional heat flow.
  3. Abernathey John R. (Jericho VT) Lasky Jerome B. (Essex Junction VT) Nesbit Larry A. (Williston VT) Sedgwick Thomas O. (Briarcliff Manor NY) Stiffler Scott R. (Cortland NY), Method of producing a thin silicon-on-insulator layer.
  4. Cook Melvin S. (43 Westerly Rd. Saddle River NJ 07458), Method of producing single-crystal semiconductor films by laser treatment.
  5. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.

이 특허를 인용한 특허 (57)

  1. Linares, Robert C.; Doering, Patrick J., Boron doped single crystal diamond electrochemical synthesis electrode.
  2. Francois J. Henley ; Michael A. Brayan ; William G. En, Cleaving process to fabricate multilayered substrates using low implantation doses.
  3. Henley,Francois J.; Bryan,Michael A.; En,William G., Cleaving process to fabricate multilayered substrates using low implantation doses.
  4. Baer, Stephen C., Cleaving wafers from silicon crystals.
  5. Francois J. Henley ; Nathan Cheung, Controlled cleavage process and device for patterned films.
  6. Henley, Francois J.; Cheung, Nathan, Controlled cleavage process and device for patterned films.
  7. Francois J. Henley ; Nathan W. Cheung, Controlled cleavage process and resulting device using beta annealing.
  8. Henley, Francois J.; Cheung, Nathan, Controlled cleavage process using pressurized fluid.
  9. Henley,Francois J.; Cheung,Nathan W., Controlled cleaving process.
  10. Henley,Francois J.; Cheung,Nathan W., Controlled cleaving process.
  11. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
  12. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
  13. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
  14. Henley,Francois J.; Cheung,Nathan W., Controlled process and resulting device.
  15. Speck, James S.; Haskell, Benjamin A.; Pattison, P. Morgan; Baker, Troy J., Etching technique for the fabrication of thin (Al, In, Ga)N layers.
  16. Henley, Francois J.; Cheung, Nathan W., Gettering technique for wafers made using a controlled cleaving process.
  17. Henley, Francois J.; Cheung, Nathan W., Gettering technique for wafers made using a controlled cleaving process.
  18. Yong Chen ; Scott W. Corzine ; Theodore I. Kamins ; Michael J. Ludowise ; Pierre H. Mertz ; Shih-Yuan Wang, Integrated circuit substrate that accommodates lattice mismatch stress.
  19. Adam, John D.; Krishnaswamy, Silai V.; Piazza, Gianluca, Lateral over-moded bulk acoustic resonators.
  20. Henley, Francois J., Layer transfer of films utilizing controlled propagation.
  21. Henley, Francois J., Layer transfer of films utilizing controlled shear region.
  22. Tiwari, Sandip, Low temperature semiconductor layering and three-dimensional electronic circuits using the layering.
  23. Francois J. Henley ; Nathan W. Cheung, Method and device for controlled cleaving process.
  24. Henley, Francois J.; Cheung, Nathan W., Method and device for controlled cleaving process.
  25. Henley,Francois J.; Cheung,Nathan, Method and device for controlled cleaving process.
  26. Iwasaki, Atsushi; Ghyselen, Bruno, Method and device for making substrates.
  27. Henley, Francois J., Method and structure for fabricating solar cells using a thick layer transfer process.
  28. Faure,Bruce, Method for fabricating a carrier substrate.
  29. Radojevic, Antonije M.; Osgood, Jr., Richard M.; Levy, Miguel, Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same.
  30. Kub, Francis J.; Hobart, Karl D., Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting.
  31. Kub, Francis J.; Hobart, Karl D., Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques.
  32. Artmann, Hans; Frey, Wilhelm; Moellendorf, Manfred, Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate.
  33. Feng Zhou ; Seng-Tiong Ho, Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate.
  34. Kononchuk,Oleg; Letertre,Fabrice; Langer,Robert, Method of fabrication of highly heat dissipative substrates.
  35. Torvik,John Targe, Method of making a hybrid substrate having a thin silicon carbide membrane layer.
  36. Torvik, John Tarje, Method of making a hybride substrate having a thin silicon carbide membrane layer.
  37. Mizutani Masaki,JPX ; Tanikawa Isao,JPX ; Nakagawa Katsumi,JPX ; Shoji Tatsumi,JPX ; Ukiyo Noritaka,JPX ; Iwasaki Yukiko,JPX, Method of producing semiconductor thin film and method of producing solar cell using same.
  38. Mizutani, Masaki; Tanikawa, Isao; Nakagawa, Katsumi; Shoji, Tatsumi; Ukiyo, Noritaka; Iwasaki, Yukiko, Method of producing semiconductor thin film and method of producing solar cell using same.
  39. Malik, Igor J.; Kang, Sien G.; Fuerfanger, Martin; Kirk, Harry; Flat, Ariel; Current, Michael Ira; Ong, Philip James, Non-contact etch annealing of strained layers.
  40. Bryan, Michael A.; Kai, James K., Nozzle for cleaving substrates.
  41. Sriram, Sriram S.; Kingsley, Stuart A., Optical modulator.
  42. Bryan, Michael A., Particle distribution method and resulting structure for a layer transfer process.
  43. Moriceau, Hubert; Couchaud, Maurice; Deschanvres, Jean-Luc; Joudrier, Anne-Laure, Process for transferring films.
  44. Henley, Francois J.; Brailove, Adam, Race track configuration and method for wafering silicon solar substrates.
  45. Losavio Aldo,ITX, Recovery of damages in a field oxide caused by high energy ion implant process.
  46. Takizawa, Ritsuo, SOI substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus.
  47. Muraoka,Kouichi; Kurihara,Kazuaki, Semiconductor device and method of manufacturing the same.
  48. Henley, Francois J.; Cheung, Nathan W., Silicon-on-silicon hybrid wafer assembly.
  49. Levy, Miguel; Osgood, Jr., Richard M.; Radojevic, Antonije M., Slicing of single-crystal films using ion implantation.
  50. Loncar, Marko; Lukin, Mikhail D.; Burek, Michael J.; de Leon, Nathalie; Shields, Brendan, Small-scale fabrication systems and methods.
  51. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
  52. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
  53. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
  54. Linares,Robert C.; Doering,Patrick J., System and method for producing synthetic diamond.
  55. Brailove, Adam; Liu, Zuqin; Henley, Francois J.; Lamm, Albert J., Techniques for forming thin films by implantation with reduced channeling.
  56. Glebov,Alexei; Lee,Michael G., Thin film electro-optical deflector device and a method of fabrication of such a device.
  57. Gill, Douglas M.; Jacobson, Dale Conrad, Thin film lithium niobate structure and method of making the same.
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