초록 ▼

A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor di

A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.

대표청구항 ▼

[ What is claimed is:] [1.] A plasma treatment system for implantation, said system comprising:a vacuum chamber in which a plasma is generated in said chamber;a silicon coated susceptor disposed in said chamber to support a silicon substrate, said silicon coated susceptor providing fewer non-silicon

[ What is claimed is:] [1.] A plasma treatment system for implantation, said system comprising:a vacuum chamber in which a plasma is generated in said chamber;a silicon coated susceptor disposed in said chamber to support a silicon substrate, said silicon coated susceptor providing fewer non-silicon bearing impurities than can be sputtered off of the susceptor if uncoated during an implantation process; anda silicon liner surrounding said susceptor said silicon liner comprising a plurality of panels, each of said panels including a plurality of substrates, which are coupled to each other on a frame structure.