초록 ▼

Planarization of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly scanned and a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connecti

Planarization of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly scanned and a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

대표청구항 ▼

[ We claim:] [1.] A method of bipolar planarizing of a metallized surface of a semiconductor wafer, the method including the steps of:(a) positioning a bipolar electrode assembly proximate to said metallized surface, said bipolar electrode assembly having an anode and cathode separated along an axis

[ We claim:] [1.] A method of bipolar planarizing of a metallized surface of a semiconductor wafer, the method including the steps of:(a) positioning a bipolar electrode assembly proximate to said metallized surface, said bipolar electrode assembly having an anode and cathode separated along an axis parallel to said metallized surface;(b) bathing a region between said anode and said cathode and said metallized surface in an electrolytic solution;(c) providing relative motion between said bipolar electrode assembly and said metallized surface, said relative motion begin parallel to said metallized surface; and(d) applying a voltage across said anode and said cathode so as to conduct current through said electrolytic solution into a first region of said metallized surface; said first region being adjacent to said anode; and to concurrently planarize said metal from a second region of said metallized surface; said second region being adjacent to said cathode; through the action of flowing current from said anode through said electrolytic solution to said first region of said metallized surface, flowing said current through said metallized surface to said second region, and flowing said current to said cathode through said electrolytic solution; wherein said flowing of current is established without physical attachment to said metallized surface and wherein said first and second regions of the metallized surface do not intersect any linear path extending directly in between the anode and cathode.