초록 ▼

A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power h

A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

대표청구항 ▼

[ What is claimed is:] [1.] A method for depositing a layer on a substrate disposed in a substrate processing chamber, said method comprising the steps of:(a) placing a substrate in a deposition zone of the substrate processing chamber;(b) during a first deposition stage, flowing an inert gas and a

[ What is claimed is:] [1.] A method for depositing a layer on a substrate disposed in a substrate processing chamber, said method comprising the steps of:(a) placing a substrate in a deposition zone of the substrate processing chamber;(b) during a first deposition stage, flowing an inert gas and a first reactant gas into the deposition zone and applying RF power to initiate a plasma from said inert gas and said first reactant gas by ramping said RF power to full power at a selected rate of increase, wherein constituents from said inert gas and said first reactant gas do not react to deposit material on the substrate; and(c) during a second deposition stage after said first deposition stage and after said RF power reaches substantially full power, flowing a second reactant gas into the deposition zone to initiate deposition of the layer over the substrate.