초록 ▼

A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger

A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

대표청구항 ▼

[ What is claimed is:] [1.] A method for producing a member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, which comprises a step of preparing a mixed powder by so blending powdery materials comprising, as main components, aluminum or an

[ What is claimed is:] [1.] A method for producing a member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, which comprises a step of preparing a mixed powder by so blending powdery materials comprising, as main components, aluminum or an aluminum alloy and silicon carbide that the amount of silicon carbide in the mixed powder may be from 10 to 70% by weight of the total, wherein the aluminum or the aluminum alloy contains up to 2% by weight of a sub-component, a step of compacting said mixed powder into a compact, and a step of sintering said compact into a sintered body, in a non-oxidizing atmosphere containing at least 99% of nitrogen gas, at a temperature within a range falling between 600.degree. C. and the melting point of aluminum, and subjecting the sintered body to pressure heat treatment in a mold.