초록 ▼

A process for producing a metal oxide semiconductor (MOS) transistor is provided. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate.

A process for producing a metal oxide semiconductor (MOS) transistor is provided. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate. A second substrate is placed onto the surface of the first substrate. A layer is delaminated from the first substrate. The layer includes the at least two oxide-filled trenches and a portion of the first substrate. The layer is then bonded to a second substrate. First and second active regions are then formed, in the portion of the first substrate, overlaying the surfaces of the at least two trenches.

대표청구항 ▼

[ What is claimed is:] [1.] A method for producing a MOS transistor, the method comprising:a. forming two trenches at a surface of a first substrate;b. forming a first dielectric layer into said two trenches;c. placing a second substrate onto said surface of said first substrate;d. delaminating a la

[ What is claimed is:] [1.] A method for producing a MOS transistor, the method comprising:a. forming two trenches at a surface of a first substrate;b. forming a first dielectric layer into said two trenches;c. placing a second substrate onto said surface of said first substrate;d. delaminating a layer from said first substrate, said layer including said two trenches and a portion of said first substrate;e. bonding said layer to said second substrate; andf. forming, in said portion of said first substrate, first and second active regions.