초록 ▼

A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure

A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

대표청구항 ▼

[ What is claimed is:] [1.] A method of removing an undesired material from a substrate, the undesired material comprising a material containing carbon atoms, the method comprisingplacing the substrate in a gaseous environment, the gaseous environment comprising oxygen and at least one fluorine-cont

[ What is claimed is:] [1.] A method of removing an undesired material from a substrate, the undesired material comprising a material containing carbon atoms, the method comprisingplacing the substrate in a gaseous environment, the gaseous environment comprising oxygen and at least one fluorine-containing gas selected from the group consisting of fluorine and fluorine containing gases, other than F.sub.2 O, which are free of hydrogen and which can be photodissociated, and the gaseous environment being substantially free of plasma products, water, hydrogen, hydrogen fluoride and hydrogen containing organic compounds, andexposing the substrate to UV irradiation in the presence of the gaseous environment until the undesired material has been removed.