초록 ▼

This invention relates to mounting integrated circuits (IC) to multi-chip modules (MCM) or substrates. More specifically, it provides a method of mounting a semiconductor die such as a thin slice of Mercury Cadmium Telluride (MCT) to a silicon semiconductor substrate, a read-out integrated circuit (

This invention relates to mounting integrated circuits (IC) to multi-chip modules (MCM) or substrates. More specifically, it provides a method of mounting a semiconductor die such as a thin slice of Mercury Cadmium Telluride (MCT) to a silicon semiconductor substrate, a read-out integrated circuit (ROIC), using a thermoplastic to reduce stress on the MCT caused by mismatched Coefficients of Thermal Expansion (CTE). This process provides for an array of infrared photodetectors on a material such as MCT to be mounted to a read-out integrated circuit (ROIC) using the Vertical Integrated Photodiode (VIP) approach to FPAs, while allowing double sided interdiffusion of CdTe for surface passivation to reduce dark currents and improve performance, without the problems associated with mismatched coefficients of thermal expansion during high temperature processes.

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a focal plane array structure, said method comprising steps:(a) growing a MCT layer having a top side and bottom side on a carrier material;(b) depositing a passivation layer on said top side of said MCT layer mounted to said carrier;(c) mounting with

[ What is claimed is:] [1.] A method of forming a focal plane array structure, said method comprising steps:(a) growing a MCT layer having a top side and bottom side on a carrier material;(b) depositing a passivation layer on said top side of said MCT layer mounted to said carrier;(c) mounting with a thin layer of thermoplastic adhesive said MCT to a read out integrated circuit with said first passivation layer facing said readout integrated circuit;(d) removing said carrier material to expose said bottom side of said MCT layer;(e) polishing said bottom side of said MCT subsequent to removing said carrier material from said MCT; and(f) depositing a second passivation layer to said bottom side of said MCT layer to form a sandwiched MCT such that both said top side and bottom side of said MCT layer is passivated with said first and said second passivation layers respectively; and(g) annealing said sandwiched MCT to interdiffuse said first and second passivation layers with said MCT layer, wherein said thermoplastic adhesive is a material which melts when heated above a softening temperature, wherein said layer of thermoplastic adhesive is from 1-2 microns thick.