초록 ▼

In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher

In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher etch selectivity to the trench-level dielectric film (26) than to the via-level dielectric film (24). A trench opening (54) is patterned in a photoresist layer (52) overlying the trench-level dielectric film (26). The via-level dielectric film (24) is etched with a second etch chemistry to extend the via opening (42) into the via-level dielectric film (24). The trench-level dielectric film (26) is etched to form a trench opening.

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming a semiconductor device, comprising:forming via-level dielectric film overlying a semiconductor device substrate;forming a trench-level dielectric film directly on and in contact with the via-level dielectric film;etching a via opening in the trench-le

[ What is claimed is:] [1.] A method for forming a semiconductor device, comprising:forming via-level dielectric film overlying a semiconductor device substrate;forming a trench-level dielectric film directly on and in contact with the via-level dielectric film;etching a via opening in the trench-level dielectric film with a first etch chemistry, wherein the first etch chemistry has a higher etch selectivity to the trench-level dielectric film than to the via-level dielectric film;providing a photoresist layer overlying the trench-level dielectric film, the photoresist layer having a photoresist opening overlying the via opening in the trench-level dielectric film;etching the via-level dielectric film with a second etch chemistry to extend the via opening into the via-level dielectric film; andetching into the trench-level dielectric film through the photoresist opening to form a trench opening.