초록 ▼

A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of depositing the barrier layer onto a wafer at high temperature; subjecting the barrier layer to a mixture of oxygen or an

A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of depositing the barrier layer onto a wafer at high temperature; subjecting the barrier layer to a mixture of oxygen or an oxygen-containing gas and an inert gas in the presence of a plasma at low pressure and for a time sufficient to oxidize the surface of the barrier layer; removing the oxygen-containing gas; and depositing the metal layer onto the oxidized surface without subjecting said wafer to an air break. The method permits high throughput to be achieved at low cost.

대표청구항 ▼

[ We claim:] [1.] A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of:a) completely depositing the barrier layer onto a wafer at high temperature;b) cooling the barrier laye

[ We claim:] [1.] A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of:a) completely depositing the barrier layer onto a wafer at high temperature;b) cooling the barrier layer;c) subsequently subjecting the barrier layer to a mixture of oxygen or an oxygen-containing gas and an inert gas in the presence of a plasma wherein the partial pressure of oxygen is between about 5.times.10.sup.-4 Torr and 5.times.10.sup.-6 Torr for a time sufficient to oxidize the surface of the barrier layer;d) removing said oxygen-containing gas; ande) depositing said metal layer onto said oxidized surface without subjecting said wafer to an air break.