초록

Plating of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

대표청구항 ▼

[ We claim:] [1.] A method of bipolar metal plating of a metallized surface of a semiconductor wafer, the method including the steps of:(a) positioning a bipolar electrode assembly proximate to said metallized surface, said bipolar electrode assembly having an anode and cathode separated along an ax

[ We claim:] [1.] A method of bipolar metal plating of a metallized surface of a semiconductor wafer, the method including the steps of:(a) positioning a bipolar electrode assembly proximate to said metallized surface, said bipolar electrode assembly having an anode and cathode separated along an axis parallel to said metallized surface;(b) bathing a region between said anode and said cathode and said metallized surface in an electroplating solution; and(c) providing relative motion between said bipolar electrode assembly and said metallized surface, said relative motion being parallel to said metallized surface; and(d) applying a voltage across said anode and said cathode to plate metal from said electroplating solution onto a first region of said metallized surface; said first region being adjacent to said anode; and to conduct current from a second region of said metallized surface; said second region being adjacent to said cathode; through the action of flowing current from said anode through said electroplating solution to said first region of said metallized surface, flowing said current through said metallized surface to said second region, and flowing said current to said cathode through said electroplating solution.