$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Robust interconnect structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/4763
출원번호 US-0314003 (1999-05-19)
발명자 / 주소
  • Edelstein Daniel Charles
  • McGahay Vincent
  • Nye
  • III Henry A.
  • Ottey Brian George Reid
  • Price William H.
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Pollock, Vande Sande & AmernickAbate
인용정보 피인용 횟수 : 34  인용 특허 : 5

초록

A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

대표청구항

[ What is claimed is:] [1.] A structure comprising layer of copper, a barrier layer, a layer of AlCu and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer, and wherein the barrier layer is located between the layer of

이 특허에 인용된 특허 (5)

  1. Cheung Robin W. ; Lin Ming-Ren, Advanced copper interconnect system that is compatible with existing IC wire bonding technology.
  2. Nye ; III Henry A. (Bedford NY) Roeder Jeffrey F. (Brookfield CT) Tong Ho-Ming (Yorktown Heights NY) Totta Paul A. (Poughkeepsie NY), Electroplated solder terminal.
  3. Agarwala Birendra N. (Hopewell Junction NY) Datta Madhav (Yorktown Heights NY) Gegenwarth Richard E. (Poughkeepsie NY) Jahnes Christopher V. (Monsey NY) Miller Patrick M. (Poughkeepsie NY) Nye ; III , Etching processes for avoiding edge stress in semiconductor chip solder bumps.
  4. Motsiff William Thomas ; Geffken Robert Michael ; Uttecht Ronald Robert, Integrated pad and fuse structure for planar copper metallurgy.
  5. Bhattacharya Somnath (Wappingers Falls NY) Hu Shih-Ming (Hopewell Junction NY) Koopman Nicholas G. (Hopewell Junction NY) Oldakowski Chester C. (Poughkeepsie NY), Solder mound formation on substrates.

이 특허를 인용한 특허 (34)

  1. Lee, Bo-I; Wang, Dean, Bonding metallurgy for three-dimensional interconnect.
  2. Lee, Bo-I; Wang, Dean, Bonding metallurgy for three-dimensional interconnect.
  3. Edelstein,Daniel C.; Andricacos,Panayotis C.; Cotte,John M.; Deligianni,Hariklia; Magerlein,John H.; Petrarca,Kevin S.; Stein,Kenneth J.; Volant,Richard P., High Q factor integrated circuit inductor.
  4. Naik, Mehul B.; Ma, Paul F.; Ha, Tae Hong; Guggilla, Srinivas, Method and apparatus for protecting metal interconnect from halogen based precursors.
  5. Xiao, De Yuan; Chen, Guo Qing, Method and system for forming conductive bumping with copper interconnection.
  6. Xiao, De Yuan; Chen, Guo Qing, Method and system for forming conductive bumping with copper interconnection.
  7. Xiao, De Yuan; Chen, Guo Qing, Method and system for forming conductive bumping with copper interconnection.
  8. Gardecki, Leonard J.; Palmer, James R.; Probstfield, Erik M.; Wirsing, Adolf E., Method for forming interconnects on thin wafers.
  9. Gardecki,Leonard J.; Palmer,James R.; Probstfield,Erik M.; Wirsing,Adolf E., Method for forming interconnects on thin wafers.
  10. Daniel Yap ; Phillip H. Lawyer, Method for manufacturing precision electroplated solder bumps.
  11. Edelstein, Daniel C.; Andricacos, Panayotis C.; Cotte, John M.; Deligianni, Hariklia; Magerlein, John H.; Petrarca, Kevin S.; Stein, Kenneth J.; Volant, Richard P., Method of fabricating a high Q factor integrated circuit inductor.
  12. Edelstein, Daniel C.; Andricacos, Panayotis C.; Cotte, John M.; Deligianni, Hariklia; Magerlein, John H.; Petrarca, Kevin S.; Stein, Kenneth J.; Volant, Richard P., Method of fabricating a high Q factor integrated circuit inductor.
  13. Stuart E. Greer, Method of forming copper interconnection utilizing aluminum capping film.
  14. Chen,Sheng Hsiung, Method of improving copper pad adhesion.
  15. Edelstein,Daniel C.; Kang,Sung Kwon; McGlashan Powell,Maurice; O'Sullivan,Eugene J.; Walker,George F., Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped.
  16. Costrini Gregory ; Goldblatt Ronald Dean ; Heidenreich ; III John Edward ; McDevitt Thomas Leddy, Method/structure for creating aluminum wirebound pad on copper BEOL.
  17. Matsumura, Takayoshi; Kobae, Kenji; Takeuchi, Shuichi; Takahashi, Tetsuya, Multichip module, printed circuit board unit, and electronic apparatus.
  18. Yap, Daniel; Lawyer, Philip H., Precision electroplated solder bumps and method for manufacturing thereof.
  19. Hatano, Masaaki; Usui, Takamasa, Semiconductor device.
  20. Sameshima, Katsumi, Semiconductor device.
  21. Sameshima, Katsumi, Semiconductor device.
  22. Sameshima, Katsumi, Semiconductor device.
  23. Shinkai, Hiroyuki; Okumura, Hiroshi, Semiconductor device employing wafer level chip size package technology.
  24. Farooq, Mukta G.; Kinser, Emily R.; Melville, Ian D.; Semkow, Krystyna W., Semiconductor device having a copper plug.
  25. Farooq, Mukta G.; Kinser, Emily R.; Melville, Ian D.; Semkow, Krystyna Waleria, Semiconductor device having a copper plug.
  26. Farooq, Mukta G.; Kinser, Emily R.; Melville, Ian D.; Semkow, Krystyna Waleria, Semiconductor device having a copper plug.
  27. Farooq, Mukta G.; Kinser, Emily R.; Melville, Ian D.; Semkow, Krystyna Waleria, Semiconductor device having a copper plug.
  28. Erwin, Brian M.; McLaughlin, Karen P.; Misra, Ekta, Semiconductor device including passivation layer encapsulant.
  29. Tsuboi, Atsushi, Semiconductor device utilizing a side wall to prevent deterioration between electrode pad and barrier layer.
  30. Daubenspeck, Timothy H.; Gambino, Jeffrey P.; Misra, Ekta; Muzzy, Christopher D.; Sauter, Wolfgang; Scott, George J., Solder bump connections.
  31. Daubenspeck, Timothy H.; Gambino, Jeffrey P.; Misra, Ekta; Muzzy, Christopher D.; Sauter, Wolfgang; Scott, George J., Solder bump connections.
  32. Bezama, Raschid J.; Daubenspeck, Timothy H.; LaFontant, Gary; Melville, Ian D.; Misra, Ekta; Scott, George J.; Semkow, Krystyna W.; Sullivan, Timothy D.; Susko, Robin A.; Wassick, Thomas A.; Wei, Xiaojin; Wright, Steven L., Structures and methods to reduce maximum current density in a solder ball.
  33. Bezama, Raschid J.; Daubenspeck, Timothy H.; LaFontant, Gary; Melville, Ian D.; Misra, Ekta; Scott, George J.; Semkow, Krystyna W.; Sullivan, Timothy D.; Susko, Robin A.; Wassick, Thomas A.; Wei, Xiaojin; Wright, Steven L., Structures and methods to reduce maximum current density in a solder ball.
  34. Daubenspeck, Timothy Harrison; Gambino, Jeffrey Peter; Muzzy, Christopher David; Sauter, Wolfgang, Substrate anchor structure and method.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로