초록 ▼

A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a ti

A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to the semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids the electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of a stratified metal layer similar or identical to the metallized lands (16a, 16b). A method of making the semiconductor bridge devices includes metal sputtering of titanium, then titanium plus tungsten and then tungsten onto an appropriately masked semiconductor surface to attain the multilayer metallized lands (16a, 16b) and/or cover (117) of the invention.

대표청구항 ▼

[ What is claimed is:] [23.] A method of making a semiconductor bridge device comprising depositing on an electrically non-conducting substrate an electrically-conducting material having a temperature coefficient of electrical resistivity which is negative at a given temperature above about 20.degre

[ What is claimed is:] [23.] A method of making a semiconductor bridge device comprising depositing on an electrically non-conducting substrate an electrically-conducting material having a temperature coefficient of electrical resistivity which is negative at a given temperature above about 20.degree. C. and below about 1400.degree. C., the electrically-conducting material defining a bridge connecting a pair of spaced-apart pads, the bridge and the pads being so dimensioned and configured that passage therethrough of an electrical current of selected characteristics releases energy at the bridge;depositing a stratified metal layer over at least each of the spaced-apart pads by (i) depositing a base layer comprised of titanium upon the electrically conducting material, (ii) depositing an intermediate layer comprised of titanium and tungsten upon the base layer, and (iii) depositing a top layer comprised of tungsten upon the intermediate layer;forming a metallized land over each of the spaced-apart pads; andconnecting an electrical conductor to each of the metallized lands for passing an electrical current of the selected characteristics through the bridge.