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Methods for preparing ruthenium oxide films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23L-016/40
출원번호 US-0140932 (1998-08-27)
발명자 / 주소
  • Vaartstra Brian A.
  • Marsh Eugene P.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Mueting, Raasch & Gebhardt, P.A.
인용정보 피인용 횟수 : 102  인용 특허 : 11

초록 ▼

The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, combinations thereo

대표청구항 ▼

[ What is claimed is:] [1.] A method of manufacturing a semiconductor structure, the method comprising:providing a semiconductor substrate or substrate assembly;providing a liquid precursor composition comprising one or more compounds of the formula:EQU (diene)Ru(CO).sub.3 rein "diene" refers to lin

이 특허에 인용된 특허 (11)

  1. Fazan Pierre C. (Boise ID) Sandhu Gurtej S. (Boise ID), Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for.
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  2. McCormick Fred B. (Maplewood MN) Gladfelter Wayne L. (St. Paul MN) Senzaki Yoshihide (Minneapolis MN), Chemical vapor deposition of iron, ruthenium, and osmium.
    상세보기
  3. McCormick Fred B. (Maplewood MN) Gladfelter Wayne L. (St. Paul MN) Senzaki Yoshihide (Minneapolis MN), Chemical vapor deposition of iron, ruthenium, and osmium.
    상세보기
  4. Spencer James T. (Syracuse NY) Ernst Richard D. (Salt Lake City UT), Chemical vapor deposition process employing metal pentadienyl complexes.
    상세보기
  5. Douglas Monte A. (Coppell TX) Summerfelt Scott R. (Dallas TX), Electrodes for high dielectric constant materials.
    상세보기
  6. Mihara Takashi (Iruma JPX) Yoshimori Hiroyuki (Fujino-machi JPX) Watanabe Hitoshi (Tokyo JPX) McMillan Larry D. (Colorado Springs CO) De Araujo Carlos P. (Colorado Springs CO), Ferroelectric integrated circuit.
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  7. Summerfelt Scott R. (Dallas TX) Beratan Howard R. (Richardson TX) Kirlin Peter S. (Bethel CT) Gnade Bruce E. (Dallas TX), High-dielectric-constant material electrodes comprising thin platinum layers.
    상세보기
  8. Summerfelt Scott R. (Dallas TX) Beratan Howard R. (Richardson TX) Kirlin Peter S. (Bethel CT) Gnade Bruce E. (Dallas TX), High-dielectric-constant material electrodes comprising thin platinum layers.
    상세보기
  9. Kingon Angus I. (Cary NC) Al-Shareef Husam N. (Albuquerque NM) Auciello Orlando H. (Cary NC) Gifford Ken D. (Raleigh NC) Lichtenwalner Dan J. (Raleigh NC) Dat Rovindra (Dallas TX), Hybrid metal/metal oxide electrodes for ferroelectric capacitors.
    상세보기
  10. Hicks Robert F. (Los Angeles CA) Kaesz Herbert D. (Los Angeles CA) Xu Dagiang (Los Angeles CA), Low temperature organometallic deposition of metals.
    상세보기
  11. Maniar Papu D. (Austin TX) Moazzami Reza (Austin TX) Mogab C. Joseph (Austin TX), Semiconductor device having a reducing/oxidizing conductive material.
    상세보기

이 특허를 인용한 특허 (102)

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  2. Shakespeare,Stuart, Apparatus and method for depositing material onto a substrate using a roll-to-roll mask.
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  3. Jacobs, Harlan T.; Jenson, Mark L.; Klaassen, Jody J.; Yan, Jenn-Feng, Battery-operated wireless-communication apparatus and method.
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  4. Jacobs, Harlan T.; Jenson, Mark L.; Klassen, Jody J.; Yan, Jenn-Feng, Battery-operated wireless-communication apparatus and method.
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  5. Jacobs,Harlan Theodore; Jenson,Mark Lynn; Klaassen,Jody Jon; Yan,Jenn Feng, Battery-operated wireless-communication apparatus and method.
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  6. Marsh, Eugene P.; Kraus, Brenda D., Capacitor having RuSixOy-containing adhesion layers.
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  7. Basceri, Cem; Sandhu, Gurtej S.; Yang, Sam, Capacitor with high dielectric constant materials.
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  8. Basceri, Cem; Sandhu, Gurtej S.; Yang, Sam, Capacitor with high dielectric constant materials and method of making.
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  9. Basceri,Cem; Sandhu,Gurtej S.; Visokay,Mark, Capacitor with high dielectric constant materials and method of making.
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  10. Basceri,Cem; Sandhu,Gurtej S.; Yang,Sam, Capacitor with high dielectric constant materials and method of making.
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  16. Vaartstra, Brian A.; Marsh, Eugene P., Device structures including ruthenium silicide diffusion barrier layers.
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  17. Marsh, Eugene P., Devices containing platinum-iridium films and methods of preparing such films and devices.
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  19. Marsh,Eugene P., Devices containing platinum-iridium films and methods of preparing such films and devices.
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  34. Marsh, Eugene P., Metal plating using seed film.
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  35. Marsh, Eugene P., Metal plating using seed film.
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  50. Dussarrat, Christian; Gatineau, Julien, Method for the deposition of a ruthenium containing film.
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  51. Dussarrat, Christian; Gatineau, Julien, Method for the deposition of a ruthenium-containing film.
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  52. Marsh, Eugene P., Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics.
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  53. Marsh, Eugene P., Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics.
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  54. Jenson, Mark Lynn, Method of continuous processing of thin-film batteries and like devices.
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  55. Marsh, Eugene P.; Uhlenbrock, Stefan, Method of forming ruthenium and ruthenium oxide films on a semiconductor structure.
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  56. Kostamo, Juhana; Soininen, Pekka J.; Elers, Kai-Erik; Haukka, Suvi, Method of growing electrical conductors.
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  58. Marsh, Eugene P.; Kraus, Brenda D., Method of manufacturing a capacitor having RuSixOy-containing adhesion layers.
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  59. Uhlenbrock,Stefan; Marsh,Eugene P., Methods and apparatus for forming rhodium-containing layers.
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  60. Uhlenbrock,Stefan; Marsh,Eugene P., Methods and apparatus for forming rhodium-containing layers.
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  63. Brian A. Vaartstra, Methods for forming iridium and platinum containing films on substrates.
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