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Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/00
출원번호 US-0978933 (1997-11-26)
발명자 / 주소
  • Moslehi Mehrdad M.
출원인 / 주소
  • CVC Products, Inc.
대리인 / 주소
    Gray Cary, Ware & Freidenrich, LLP
인용정보 피인용 횟수 : 59  인용 특허 : 8

초록

A system and related method are disclosed for performing inductively-coupled-plasma-enhanced ionized physical-vapor deposition process for depositing a material layer on a work piece such as a semiconductor substrate or a thin-film head substrate. Within a PVD process chamber, a plurality of inducti

대표청구항

[ What is claimed is:] [1.] A physical-vapor deposition system for depositing a material layer onto a substrate, comprising:a low-pressure process chamber for processing a substrate;a chuck assembly for holding the substrate;a target assembly comprising a sputtering energy source and a target materi

이 특허에 인용된 특허 (8)

  1. Mosely Roderick C. (Mountain View CA) Raaijmakers Ivo J. (San Jose CA) Hanawa Hiroji (Santa Clara CA), Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency.
  2. Benzing Jeffrey C. (Saratoga CA) Broadbent Eliot K. (San Jose CA) Rough J. Kirkwood H. (San Jose CA), Induction plasma source.
  3. Hartig Michael J. (Austin TX) Arnold John C. (Austin TX), Inductively coupled plasma reactor and process.
  4. Benzing Jeffrey C. (Saratoga CA) Broadbent Eliot K. (San Jose CA) Rough J. Kirkwood H. (San Jose CA), Method of generating plasma having high ion density for substrate processing operation.
  5. Ishii Nobuo (Yamanashi-ken JPX) Hata Jiro (Yamanashi-ken JPX) Koshimizu Chishio (Yamanashi-ken JPX) Tahara Yoshifumi (Tokyo JPX) Nishikawa Hiroshi (Tokyo JPX) Imahashi Isei (Yamanashi-ken JPX), Plasma processing apparatus.
  6. Gibb Ian (Ruislip GB2) Allen Philip (Feltham GB2) Barnes Andrew (Hillingdon GB2), Plasma processing device comprising plural RF inductive coils.
  7. Paranjpe Ajit P. (Plano TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber.
  8. Chan Chung (8 Pontiac Rd. Newton MA 02168), System for the plasma treatment of large area substrates.

이 특허를 인용한 특허 (59)

  1. Jenson, Mark L.; Klaassen, Jody J.; Sullivan, Jim, Active wireless tagging system on peel and stick substrate.
  2. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  3. Shakespeare,Stuart, Apparatus and method for depositing material onto a substrate using a roll-to-roll mask.
  4. Jacobs, Harlan T.; Jenson, Mark L.; Klaassen, Jody J.; Yan, Jenn-Feng, Battery-operated wireless-communication apparatus and method.
  5. Jacobs, Harlan T.; Jenson, Mark L.; Klassen, Jody J.; Yan, Jenn-Feng, Battery-operated wireless-communication apparatus and method.
  6. Jacobs,Harlan Theodore; Jenson,Mark Lynn; Klaassen,Jody Jon; Yan,Jenn Feng, Battery-operated wireless-communication apparatus and method.
  7. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  8. Lubomirsky, Dmitry, Chamber with flow-through source.
  9. Lubomirsky, Dmitry, Chamber with flow-through source.
  10. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  11. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  12. Richard Ernest Demaray ; Chandra Deshpandey ; Rajiv Gopal Pethe, Collimated sputtering of semiconductor and other films.
  13. Jenson,Mark Lynn, Continuous processing of thin-film batteries and like devices.
  14. Jenson,Mark Lynn; Klaassen,Jody Jon; Weiss,Victor Henry; Yan,Jenn Feng, Device enclosures and devices with integrated battery.
  15. Jacobs, Harlan T.; Jenson, Mark L.; Klaassen, Jody J.; Yan, Jenn-Feng, Encapsulated integrated-circuit device with thin-film battery.
  16. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  17. Tarnowski,Dave J.; Jenson,Mark L., Layered barrier structure having one or more definable layers and method.
  18. Klaassen,Jody J., Lithium/air batteries with LiPON as separator and protective barrier and method.
  19. Klaassen,Jody J., Lithium/air batteries with LiPON as separator and protective barrier and method.
  20. Jenson, Mark L., Low-temperature fabrication of thin-film energy-storage devices.
  21. Jenson, Mark L.; Klaassen, Jody J., Method and apparatus for integrated-circuit battery devices.
  22. Jenson, Mark L.; Klaassen, Jody J., Method and apparatus for integrated-circuit battery devices.
  23. Han, Seung-Hee; Byun, Ji-Young; Seok, Hyun-Kwang; Han, Jun-Hyun; Kim, Yu-Chan; Lee, Sung-Bai; Choi, Jin-Young, Method and apparatus for plasma ion implantation of solid element.
  24. Jenson,Mark L.; Weiss,Victor H., Method and apparatus for thin-film battery having ultra-thin electrolyte.
  25. Jenson, Mark Lynn, Method of continuous processing of thin-film batteries and like devices.
  26. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  27. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  28. Tsai, Ming-Chin; Lin, Bo-Hung; Kao, Chung-En; Lin, Chin-Hsiang, Multi coil target design.
  29. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  30. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  31. Iijima,Etsuo; Tsuchiya,Hiroshi, Plasma processing apparatus and plasma processing method.
  32. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  33. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  34. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  35. Read, John B.; Sweeney, Daniel C., Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices.
  36. Sweeney, Daniel C.; Read, John B., Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices.
  37. Halliyal,Arvind; Singh,Bhanwar; Subramanian,Ramkumar, Scatterometry and acoustic based active control of thin film deposition process.
  38. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  39. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  40. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  41. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  42. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  43. Oh, Seongshik; Kim, Yong-Seung, Self-gettering differential pump.
  44. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  45. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  46. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  47. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  48. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  49. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  50. Jenson,Mark L.; Klaassen,Jody J.; Sullivan,Jim; Lemaire,Charles A.; Billion,Richard E., Solid state MEMS activity-activated battery device and method.
  51. Jenson, Mark L.; Klaassen, Jody J.; Sullivan, Jim; Lemaire, Charles A.; Billion, Richard E., Solid state activity-activated battery device and method.
  52. David Alan Baldwin ; Todd Lanier Hylton, System and method for performing sputter deposition using a divergent ion beam source and a rotating substrate.
  53. Park, Soonam; Zhu, Yufei; Suarez, Edwin C.; Ingle, Nitin K.; Lubomirsky, Dmitry; Huang, Jiayin, Systems and methods for internal surface conditioning assessment in plasma processing equipment.
  54. Klaassen, Jody J., Thin-film batteries with polymer and LiPON electrolyte layers and method.
  55. Jenson,Mark L., Thin-film battery devices and apparatus for making the same.
  56. Jenson,Mark Lynn; Weiss,Victor Henry, Thin-film battery having ultra-thin electrolyte.
  57. Jenson,Mark Lynn; Weiss,Victor Henry, Thin-film battery having ultra-thin electrolyte and associated method.
  58. Stanley Matsuba, Uniform surface texturing for PVD/CVD hardware.
  59. DiVergilio, William F.; Srivastava, Aseem K., Wide area radio frequency plasma apparatus for processing multiple substrates.
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