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A method for chemical vapor deposition includes dispensing a precursor to a vaporizer positioned within a vaporization chamber and delivering a vapor to a process chamber without a carrier gas. A flow meter is positioned within the delivery conduit for measuring the flow rate of precursor through th

A method for chemical vapor deposition includes dispensing a precursor to a vaporizer positioned within a vaporization chamber and delivering a vapor to a process chamber without a carrier gas. A flow meter is positioned within the delivery conduit for measuring the flow rate of precursor through the delivery conduit. A flow controller is likewise positioned within the delivery conduit for controlling the flow of precursor in response to the measured flow rate.

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[ What is claimed is:] [1.] A method for forming a material over a semiconductor substrate in a process chamber by chemical vapor deposition, comprising the steps of:vaporizing a precursor in a vaporization chamber to generate a gas;delivering the gas to the process chamber, along a gas flow path wi

[ What is claimed is:] [1.] A method for forming a material over a semiconductor substrate in a process chamber by chemical vapor deposition, comprising the steps of:vaporizing a precursor in a vaporization chamber to generate a gas;delivering the gas to the process chamber, along a gas flow path without a carrier gas at a controlled temperature and pressure,measuring gas flow rate through the gas flow path extending between the vaporization chamber and the process chamber containing the semiconductor substrate, the gas flow path having a first pressure sensor and a second pressure sensor; andcontrolling the gas flow rate between the vaporization chamber and the process chamber in response to the measured gas flow rate to form a material over the substrate.