초록 ▼

A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wa

A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.

대표청구항 ▼

[ What is claimed is:] [1.] A method of operating a substrate processing chamber to deposit an in-situ multilayer film over a substrate disposed in the chamber, said method comprising:(a) during a first deposition stage flowing a first process gas into the chamber from a gas inlet to deposit a first

[ What is claimed is:] [1.] A method of operating a substrate processing chamber to deposit an in-situ multilayer film over a substrate disposed in the chamber, said method comprising:(a) during a first deposition stage flowing a first process gas into the chamber from a gas inlet to deposit a first layer of the film over the substrate, wherein particles may form in the gas inlet during deposition of said first layer;(b) during a second deposition stage after said first stage, flowing a second process gas into the chamber from said gas inlet to deposit a second layer of the film over the first layer; and(c) between the first and second deposition stages, flowing an intermediate gas into the chamber from said gas inlet and maintaining pressure within said chamber at a pressure level sufficient to maintain a laminar gas flow between said gas inlet and a chamber exhaust port during the period between the first and second deposition stages, the laminar gas flow transporting particles dislodged from the gas inlet to the chamber exhaust port to reduce the particulate contamination of the substrate.