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Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C04B-041/00
출원번호 US-0102582 (1998-06-23)
우선권정보 JP0325171 (1997-11-12)
발명자 / 주소
  • Ohashi Tsuneaki,JPX
  • Araki Kiyoshi,JPX
  • Shimura Sadanori,JPX
  • Katsuda Yuji,JPX
출원인 / 주소
  • NGK Insulators, Ltd., JPX
대리인 / 주소
    Parkhurst & Wendel, LLP
인용정보 피인용 횟수 : 45  인용 특허 : 6

초록

This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting

대표청구항

[ What is claimed is:] [1.] A wafer-supporting member exposed to a plasma of a halogen based corrosive gas, said member comprising (1) a main body made of a material selected from the group consisting of a silicon nitride, a silicon carbide, alumina, boron carbide, silicon oxide, and an aluminum nit

이 특허에 인용된 특허 (6)

  1. Kasori Mituo (Kawasaki JPX) Shinozaki Kazuo (Tokyo JPX) Anzai Kazuo (Tokyo JPX) Takano Takeshi (Samukawa JPX), Aluminum nitride sintered body.
  2. Kasori Mituo (Kawasaki JPX) Shinozaki Kazuo (Tokyo JPX) Anzai Kazuo (Tokyo JPX) Tsuge Akihiko (Yokohama JPX), Aluminum nitride sintered body and process for producing the same.
  3. Miyahara Kenichiro (Kokubu JPX), Aluminum nitride sintered body and production thereof.
  4. Ueno Fumio (Yokohama JPX) Kasori Mitsuo (Kawasaki JPX) Horiguchi Akihiro (Fujisawa JPX) Oh-Ishi Katsuyoshi (Kawasaki JPX), Aluminum nitride sintered body, method for manufacturing the same, and ceramic circuit board.
  5. Taniguchi Hitofumi (Chigasaki JPX) Kuramoto Nobuyuki (Sagamihara JPX), Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body.
  6. Sawamura Kentaro (Tokyo JPX) Kosaka Yoshio (Tokyo JPX) Yamaguchi Masayasu (Tokyo JPX), Sintered aluminum nitride body and method for making.

이 특허를 인용한 특허 (45)

  1. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Apparatus for an improved deposition shield in a plasma processing system.
  2. Lingampalli, Ramkishan Rao, Article for use in a semiconductor processing chamber and method of fabricating same.
  3. Escher,Gary; Allen,Mark A., Barrier layer for a processing element and a method of forming the same.
  4. Aihara, Yasufumi; Matsuda, Hiroto; Nobori, Kazuhiro; Kato, Tsutomu, Ceramic member and manufacturing method for the same.
  5. Masahiro Nakahara JP; Yumiko Itoh JP, Ceramic member resistant to halogen-plasma corrosion.
  6. Chang, Hsin-Pei; Chen, Wen-Rong; Chiang, Huann-Wu; Chen, Cheng-Shi; Li, Cong, Coated glass article and method for manufacturing same.
  7. Iacovangelo, Charles Dominic; Lou, Victor Lienkong, Coating structure and method.
  8. Won Bang ; Chen-An Chen ; Shankar Venkataraman ; Ajay Bhatnagar, Corrosion resistant coating.
  9. Takai Yasushi,JPX, Corrosion-resistant composite oxide material.
  10. Araki, Kiyoshi, Corrosion-resistant member and method of producing the same.
  11. Maeda,Takao; Shima, legal representative,Yuko; Shima, deceased,Satoshi, Electrostatic chuck.
  12. Kaushal, Tony S.; Wang, You; Kumar, Ananda H., Erosion-resistant components for plasma process chambers.
  13. Lee, Chengtsin; Sun, Jennifer Y., Fluoride glazes from fluorine ion treatment.
  14. Watanabe, Morimichi, Heat-resistant structural body, halogen-based corrosive gas-resistant material and halogen-based corrosive gas-resistant structural body.
  15. Takao Kitagawa JP; Masayuki Ishizuka JP; Kazunori Endou JP; Masayuki Hashimoto JP; Tsuyoshi Nagata JP, Heating apparatus.
  16. Sebastien Raoux, Implanatation process for improving ceramic resistance to corrosion.
  17. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  18. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  19. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  20. Lee, Chengtsin; Sun, Jennifer Y., Low temperature fluoride glasses and glazes.
  21. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  22. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  23. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  24. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  25. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  26. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  27. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved deposition shield in a plasma processing system.
  28. Nishimoto, Shinya; Mitsuhashi, Kouji; Saigusa, Hidehito; Takase, Taira; Nakayama, Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  29. Nishimoto,Shinya; Mitsuhashi,Kouji; Saigusa,Hidehito; Takase,Taira; Nakayama,Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  30. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  31. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  32. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  33. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  34. Fink, Steven T., Method and apparatus for improved baffle plate.
  35. Escher, Gary; Allen, Mark A.; Kudo, Yasuhisa, Method for adjoining adjacent coatings on a processing element.
  36. Wu, Xiaowei; Fenwick, David; Sun, Jennifer Y.; Zhan, Guodong, Multi-layer plasma resistant coating by atomic layer deposition.
  37. Fink, Steven T., Plasma processing system and baffle assembly for use in plasma processing system.
  38. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  39. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  40. Sun, Jennifer Y.; Duan, Ren-Guan; Collins, Kenneth S., Protective coatings resistant to reactive plasma processing.
  41. Sun, Jennifer Y; Duan, Ren-Guan; Collins, Kenneth S, Semiconductor processing apparatus with protective coating including amorphous phase.
  42. Rossman, Kent, Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput.
  43. Rossman, Kent, Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput.
  44. Ranish, Joseph M., Sol gel coated support ring.
  45. Aihara,Yasufumi; Matsuda,Hiroto, Yttria sintered body, electrostatic chuck, and manufacturing method of yttria sintered body.
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