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Process for forming an SOI substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/304
  • H01L-021/20
출원번호 US-0045955 (1998-03-23)
우선권정보 JP0073770 (1997-03-26)
발명자 / 주소
  • Iwane Masaaki,JPX
  • Yonehara Takao,JPX
  • Ohmi Kazuaki,JPX
출원인 / 주소
  • Canon Kabushiki Kaisha, JPX
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 31  인용 특허 : 2

초록

A process for producing an SOI substrate is disclosed which is useful for saving resources and lowering production cost. Further, a process for producing a photoelectric conversion device such as a solar cell is disclosed which can successfully separate a substrate by a porous Si layer, does not req

대표청구항

[ What is claimed is:] [1.] A process for forming a thin film which prepares a substrate having a porous layer on a nonporous layer and further having on the porous layer a layer smaller in porosity than the porous layer, and separates the nonporous layer and the layer smaller in porosity by the por

이 특허에 인용된 특허 (2)

  1. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  2. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.

이 특허를 인용한 특허 (31)

  1. Phelps, Richard A.; Slinkman, James A., Air gaps formed by porous silicon removal.
  2. George, Gregory; Johnson, Hale; Gorun, Patrick; Hermanowski, James; Stiles, Matthew, Apparatus for mechanically debonding temporary bonded semiconductor wafers.
  3. Kazutaka Yanagita JP; Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP; Hirokazu Kurisu JP, Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method.
  4. George, Gregory, Debonding equipment and methods for debonding temporary bonded wafers.
  5. George, Gregory; Rosenthal, Christopher, Debonding temporarily bonded semiconductor wafers.
  6. George, Gregory; Rosenthal, Christopher, Debonding temporarily bonded semiconductor wafers.
  7. Nayfeh, Ammar Munir; Chui, Chi On; Saraswat, Krishna C.; Yonehara, Takao, Germanium substrate-type materials and approach therefor.
  8. Nayfeh,Ammar Munir; Chui,Chi On; Saraswat,Krishna C.; Yonehara,Takao, Germanium substrate-type materials and approach therefor.
  9. Couillard, James G.; Gadkaree, Kishor P.; Mach, Joseph F., Glass-based SOI structures.
  10. Couillard, James G.; Gadkaree, Kishor P.; Mach, Joseph F., Glass-based SOI structures.
  11. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  12. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  13. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  14. Couillard,James Gregory; Gadkaree,Kishor Purushottam; Mach,Joseph Frank, Glass-based SOI structures.
  15. Aitken,Bruce Gardiner; Dejneka,Matthew John; Gadkaree,Kishor Purushottam; Pinckney,Linda Ruth, High strain glass/glass-ceramic containing semiconductor-on-insulator structures.
  16. Haukka, Suvi; Huotari, Hannu; Tuominen, Marko, High temperature atomic layer deposition of dielectric oxides.
  17. Gadkaree, Kishor Purushottam; Mayolet, Alexandre Michel, Large area semiconductor on glass insulator.
  18. Furman, Bruce K.; Purushothaman, Sampath; Sankarapandian, Muthumanickam; Topol, Anna, Layer transfer process and functionally enhanced integrated circuits produced thereby.
  19. Jean-Michel Lamure FR; Fran.cedilla.ois Lissalde FR, Method and device for separating a plate of material, in particular semiconductor material, into two wafers.
  20. Rayssac, Olivier; Moriceau, Hubert; Aspar, Bernard; Montmayeul, Philippe, Method for separating two elements and a device therefor.
  21. Sakaguchi,Kiyofumi; Yonehara,Takao, Process for production of semiconductor substrate.
  22. Kiyofumi Sakaguchi JP; Takao Yonehara JP, Semiconductor article and method of manufacturing the same.
  23. Sekiguchi,Yoshinobu; Yonehara,Takao; Koto,Makoto; Okuda,Masahiro; Shimada,Tetsuya, Semiconductor film manufacturing method and substrate manufacturing method.
  24. Yonehara, Takao; Yamagata, Kenji; Sekiguchi, Yoshinobu; Nishi, Kojiro, Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method.
  25. Yonehara, Takao; Yamagata, Kenji; Sekiguchi, Yoshinobu; Nishi, Kojiro, Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method.
  26. Couillard,James Gregory; Gadkaree,Kishor Purushottam, Semiconductor on glass insulator with deposited barrier layer.
  27. Yonehara, Takao; Sekiguci, Yoshinobu, Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor.
  28. Werkhoven,Christiaan J.; Raaijmakers,Ivo; Arena,Chantal, Silicon-on-insulator structures and methods.
  29. Aitken,Bruce Gardiner; Gadkaree,Kishor Purushottam; Dejneka,Matthew John; Pinckney,Linda Ruth, Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures.
  30. Yonehara,Takao, Substrate, manufacturing method therefor, and semiconductor device.
  31. Yonehara,Takao; Shimada,Tetsuya, Thin film transistor and method of fabricating the same.
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