초록 ▼

A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is preven

A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is prevented by two barrier layers. One is located at the interface between the connector and the insulating layer while the second barrier is an insulating layer which covers the upper surface of the connector. The damascene process involves filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing. Since photoresist is never in direct contact with the copper the problem of copper oxidation during resist ashing has been effectively eliminated.

대표청구항 ▼

[ What is claimed is:] [5.] A method for manufacturing a copper connector in an integrated circuit comprising:(a) providing a silicon substrate,(b) depositing a first insulating layer on said silicon substrate to a predetermined thickness, said first insulating layer having a top surface and a botto

[ What is claimed is:] [5.] A method for manufacturing a copper connector in an integrated circuit comprising:(a) providing a silicon substrate,(b) depositing a first insulating layer on said silicon substrate to a predetermined thickness, said first insulating layer having a top surface and a bottom surface,(c) patterning and then etching to form a trench with an open top, walls on the sides, and a bottom of said trench in said first insulating layer extending to a depth less than said predetermined thickness, said bottom of said trench being above said bottom surface of said first insulating layer leaving a separation distance between said bottom of said trench and said bottom surface,(d) depositing a first barrier layer on said top surface of said first insulating layer and on all walls of said trench and said bottom of said trench,(e) depositing a copper layer on said first barrier layer so as to more than fill said trench,(f) removing said copper layer and said first barrier layer down to the level of said first insulating layer, thereby forming a damascene connector having an upper surface,(g) depositing a second barrier layer on said first insulating layer and said upper surface of said damascene connector, and(h) depositing a second insulating layer on said second barrier layer.