초록 ▼

This invention is intended to provide a semiconductor wafer temperature measuring method for use in reflector plate-equipped infrared annealing furnaces, infrared heating epitaxy furnaces, and other semiconductor wafer processing equipment that employs lamps as the heat source, the method affording

This invention is intended to provide a semiconductor wafer temperature measuring method for use in reflector plate-equipped infrared annealing furnaces, infrared heating epitaxy furnaces, and other semiconductor wafer processing equipment that employs lamps as the heat source, the method affording easy and accurate measurement of substrate surface temperature, thereby enabling control of the heat source on the basis of these measurements. Characterizing features are the provision of a slit or small hole to the reflector plate and measuring light from the semiconductor wafer surface in the perpendicular direction by means of a scanning CCD sensor to allow substrate temperature to be measured on the basis of the radiant light distribution peak; and the provision of slits in a plurality of locations on the reflecting plate without impairing the function thereof, so that substrate temperature distribution can be measured accurately.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor wafer temperature measuring method, comprising the steps of:in a process furnace in which a semiconductor wafer is heated by means of lamps, providing a slit or small hole to a reflector plate for the lamp light;measuring therethrough light from the semico

[ What is claimed is:] [1.] A semiconductor wafer temperature measuring method, comprising the steps of:in a process furnace in which a semiconductor wafer is heated by means of lamps, providing a slit or small hole to a reflector plate for the lamp light;measuring therethrough light from the semiconductor wafer in the perpendicular direction by means of a scanning charged coupled device sensor; anddetermining substrate temperature on the basis of the radiant light distribution peak in the thusly measured radiant light intensity distribution perpendicular to the wafer.