초록 ▼

A method for forming a dual inlaid contact structure (damascene) begins by etching dual inlaid contact structures (32, 34, and 36). Masking layers (28) are (228) and the deposition of low-K dielectric material 26 is used to selectively form low-K regions (30) only in critical areas where low-K diele

A method for forming a dual inlaid contact structure (damascene) begins by etching dual inlaid contact structures (32, 34, and 36). Masking layers (28) are (228) and the deposition of low-K dielectric material 26 is used to selectively form low-K regions (30) only in critical areas where low-K dielectric material is absolutely needed. Other portions of the wafer remain covered with conventional oxide (24) so that adverse impacts of low-K dielectric material is minimized. Conductive material (38, 40, and 42) is then formed to complete dual inlaid contact structures whereby low-K dielectric plugs (30) reduce cross talk and capacitance within the final structure.

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming an integrated circuit structure, the method comprising the steps of:forming a first dielectric region wherein the first dielectric region is patterned to have an opening having a first sidewall opposite a second sidewall, the first dielectric region c

[ What is claimed is:] [1.] A method for forming an integrated circuit structure, the method comprising the steps of:forming a first dielectric region wherein the first dielectric region is patterned to have an opening having a first sidewall opposite a second sidewall, the first dielectric region comprising a first dielectric material having a first dielectric constant;etching a portion of the first dielectric material laterally adjacent the second sidewall of the opening to form a void region;filling the void region with a second dielectric region which has a second dielectric constant that is less than the first dielectric constant; andfilling the opening with a conductive material to form a conductive interconnection, the conductive interconnection having a first sidewall in contact with the first sidewall of the opening and a second sidewall in contact with the second sidewall of the opening.