초록 ▼

A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum,

A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum, or tungsten to increase barrier effectiveness and lower resistivity.

대표청구항 ▼

[ The invention claimed is:] [1.] A semiconductor comprising:a semiconductor substrate;a dielectric layer formed on a region of said semiconductor substrate;an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a conductive area in the semiconductor;

[ The invention claimed is:] [1.] A semiconductor comprising:a semiconductor substrate;a dielectric layer formed on a region of said semiconductor substrate;an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a conductive area in the semiconductor;a barrier layer on said dielectric layer in said opening, including along said walls, and in conductive contact with said conductive area, said barrier layer containing a first metal from Group VIII B combined with a second metal; anda conductive material in contact with said barrier layer, said conductive material substantially fills said opening.