초록 ▼

A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the sub

A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.

대표청구항 ▼

[ What is claimed is:] [1.] A process for forming films of material from a substrate, said process comprising steps of:introducing first gas-forming particles through a surface of the substrate to a first selected depth beyond said surface, said first gas-forming particles forming a layer of microbu

[ What is claimed is:] [1.] A process for forming films of material from a substrate, said process comprising steps of:introducing first gas-forming particles through a surface of the substrate to a first selected depth beyond said surface, said first gas-forming particles forming a layer of microbubbles to define a first layer of substrate material to be removed between about said first selected depth and said surface, and to define a first remaining portion of substrate material;connecting the surface to a first stiffener to form a first assembly,heating said first assembly to free said first layer of substrate material from the substrate to form a separated surface on said substrate, said surface having microblister damage;planarizing said microblister damaged separated surface with a layer of silicon oxide;introducing second gas-forming particles through said separated surface of said substrate to a second selected depth beyond said separated surface, said second gas-forming particles forming a second layer of microbubbles to define a second layer of substrate material to be removed between about said second selected depth and said separated surface, and to define a second remaining portion of substrate material;connecting the separated surface to a second stiffener to form a second assembly; andheating said second assembly to free said second layer of substrate material from the substrate.