초록 ▼

A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the h

A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the high temperature implantation of hydrogen, and by their combination, followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, and growth of hydrogen filled microcracks.

대표청구항 ▼

[ What is claimed is:] [21.] A method for transferring an upper portion of a monocrystalline, first substrate to a second substrate, said method providing both a reduced level of hydrogen implantation dose requirement and a reduced splitting temperature requirement, said first substrate consisting o

[ What is claimed is:] [21.] A method for transferring an upper portion of a monocrystalline, first substrate to a second substrate, said method providing both a reduced level of hydrogen implantation dose requirement and a reduced splitting temperature requirement, said first substrate consisting of said upper portion and a lower portion, said lower portion constituting a majority of said first substrate and said upper portion having a surface which is essentially flat, said method consisting of the steps of:subjecting said surface to a hydrogen trap-inducing implantation of one or more elements, said one or more elements selected from that group consisting of boron, aluminum, gallium, indium, and thallium, said at least one element having an element depth distribution after implantation in said first substrate, said element depth distribution having an element concentration maximum, said element concentration maximum essentially dividing said first substrate into said upper portion and said lower portion, said hydrogen trap-inducing implantation having a dose less than 5.times.10.sup.16 per square centimeter but greater than 1.times.10.sup.10 per square centimeter, said hydrogen trap-inducing implantation being carried out in conjunction with hydrogen implantation;subjecting said surface to a hydrogen implantation of less than 5.times.10.sup.17 cm.sup.-2 at a hydrogen implantation temperature, wherein said hydrogen implantation temperature is above 150.degree. C. but below 1200.degree. C., said hydrogen selected from that group consisting of normal hydrogen and deuterium, said hydrogen having a hydrogen depth distribution in said first substrate, said hydrogen distribution having a hydrogen concentration maximum, said hydrogen concentration maximum occurring essentially at said element concentration maximum, said hydrogen implantation being shorter in duration than that required to produce hydrogen-induced surface blisters, said hydrogen implantation being carried out in conjunction with hydrogen trap-inducing implantation;subjecting said first substrate to a sensitizing heat-treatment at a sensitizing temperature below that temperature at which implantation-induced hydrogen-traps are annealed, for a time sufficient to form microscopic, sub-surface microcracks essentially at said hydrogen concentration maximum and parallel to said surface but shorter than that required to produce hydrogen-induced surface blisters;bonding said surface of said first substrate to said second substrate to form a bonded structure by a bonding method chosen from anodic bonding and direct wafer bonding;subjecting said bonded structure to a transfer heat-treatment at a transfer temperature, for a time sufficiently long to grow hydrogen induced microcracks which overlap in a region adjacent to said maximum in said hydrogen concentration distribution and which are essentially parallel to said surface, whereby said upper portion of said first substrate is separated by splitting from said lower portion and transferred to said second substrate.