초록 ▼

A multilayer interconnected electronic component having increased electromigration lifetime is provided. The interconnections are in the form of studs and comprise vertical side walls having a refractory metal diffusion barrier liner along the sidewalls. The stud does not have a barrier layer at the

A multilayer interconnected electronic component having increased electromigration lifetime is provided. The interconnections are in the form of studs and comprise vertical side walls having a refractory metal diffusion barrier liner along the sidewalls. The stud does not have a barrier layer at the base thereof and the base of the stud contacts the metallization on the dielectric layer of the component. An adhesion layer can be provided between the base of the stud and the surface of the metallization and the adhesion layer may be continuous or discontinuous. The adhesion layer is preferably a metal such as aluminum which dissolves in the stud or metallization upon heating of the component during fabrication or otherwise during use of the component. A preferred component utilizes a dual Damascene structure.

대표청구항 ▼

[ Thus, having described the invention, what is claimed is:] [1.] A damascene or dual damascene interconnect structure in a multilayer electronic component for connecting metallization on one layer to a trench or via extending to said metallization the electronic component having an enhanced electro

[ Thus, having described the invention, what is claimed is:] [1.] A damascene or dual damascene interconnect structure in a multilayer electronic component for connecting metallization on one layer to a trench or via extending to said metallization the electronic component having an enhanced electromigration lifetime comprising:a first layer of dielectric having a first layer of conductor therein comprising a first material;a first diffusion barrier layer over said first layer of dielectric and first layer of conductor;a second dielectric layer over said first diffusion barrier layer;a trench or via through said second dielectric layer and first diffusion barrier layer extending to said first layer of conductor;a first liner along sidewalls of said trench or via for providing a diffusion barrier to said second dielectric layer; anda second layer of conductor comprising said first material filling said trench or via contacting said first layer of conductor, said first liner not being located between said first and second layers of conductor.