초록 ▼

A method for combined treatment of an object simultaneously with an ion beam and a magnetron plasma consists in that an object, e.g., a semiconductor substrate, is treated with ions of a working gas emitted from an ion-beam source and with particles of a sputterable material directed toward the obje

A method for combined treatment of an object simultaneously with an ion beam and a magnetron plasma consists in that an object, e.g., a semiconductor substrate, is treated with ions of a working gas emitted from an ion-beam source and with particles of a sputterable material directed toward the object in the same direction as the ion beam. The method is carried our by means of an apparatus that comprises a combination of a sputtering magnetron with an ion-beam source. According to several embodiments, the cathode of the ion source is separated into two parts electrically isolated from each other by a closed-loop ion-emitting slit and by isolation pads. The sputterable target is placed either onto the entire cathode or onto part thereof which is charged negatively with respect to another part which is grounded. During the operation of the apparatus, ion beam emitted from the ion source acts as a viral anode with respect to the magnetron target. As a result, the efficiency and versatility of treatment is improved, and the combined apparatus has smaller dimensions and less expensive than an ion source and magnetron used separately.

대표청구항 ▼

[ What is claimed is:] [1.] A combined sputtering magnetron/ion beam source for treating an object comprising:an ion beam source for emitting an ion beam in a direction toward said object, said ion beam source having a cathode, an anode, and at least one ion-emitting slit in said cathode;a planar sp

[ What is claimed is:] [1.] A combined sputtering magnetron/ion beam source for treating an object comprising:an ion beam source for emitting an ion beam in a direction toward said object, said ion beam source having a cathode, an anode, and at least one ion-emitting slit in said cathode;a planar sputtering magnetron having a target of a sputterable material for sputtering particles of said material,said magnetron having a direction of sputtering of said sputterable material which is coaxial with said direction toward said object, so that said object is simultaneously treated with said ion beam and with said particles of said sputterable material.