초록 ▼

A damascene interconnect containing a dual etch stop/diffusion barrier. The conductive material of the damascene interconnect is capped with a conductive metal diffusion barrier cap, typically using electroless deposition, and, optionally, with a dielectric etch-stop layer. An optional chemical mech

A damascene interconnect containing a dual etch stop/diffusion barrier. The conductive material of the damascene interconnect is capped with a conductive metal diffusion barrier cap, typically using electroless deposition, and, optionally, with a dielectric etch-stop layer. An optional chemical mechanical polish-stop layer may also be present. The different methods of the invention allow the CMP stop, reactive-ion etch stop, and metal diffusion barrier requirements of the different layers to be decoupled. A preferred conductive material is copper.

대표청구항 ▼

[ What is claimed is:] [1.] A structure comprising:a substrate;a dielectric layer over the substrate;a chemical mechanical polish-stop layer over the dielectric layer, the chemical mechanical polish-stop layer having an upper surface;an opening in the dielectric layer and the chemical mechanical pol

[ What is claimed is:] [1.] A structure comprising:a substrate;a dielectric layer over the substrate;a chemical mechanical polish-stop layer over the dielectric layer, the chemical mechanical polish-stop layer having an upper surface;an opening in the dielectric layer and the chemical mechanical polish-stop layer;a conductive liner lining the opening;a conductive material filling the opening and in electrical contact with the conductive liner, the conductive material having an upper surface coplanar with the upper surface of the chemical mechanical polish-stop layer; anda conductive metal diffusion barrier cap over the conductive material and in contact with the conductive material.