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Methods and apparatus for plasma processing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0490496 (2000-01-24)
발명자 / 주소
  • Jewett Russell F.
출원인 / 주소
  • Litmas, Inc.
대리인 / 주소
    Williams
인용정보 피인용 횟수 : 49  인용 특허 : 1

초록

The reliability of a plasma processing chamber has been increased using a heat moderating material to facilitate controlling heat removal from dielectric parts of the plasma chamber. The heat moderating material performs at least one of the functions: moderating heat transfer rate and functioning as

대표청구항

[ What is claimed is:] [1.] A method of plasma processing comprising the steps of:providing a plasma in a plasma chamber, the plasma chamber including a dielectric exposed to heat generated by the plasma, the dielectric having a surface;providing a cooling surface to remove heat from the dielectric

이 특허에 인용된 특허 (1)

  1. Powell Gary B. (Petaluma CA) Drage David J. (Sebastopol CA) Sie Tony (Walnut Creek CA), Temperature controlled chuck for elevated temperature etch processing.

이 특허를 인용한 특허 (49)

  1. Cox, Michael S.; Wang, Rongping; West, Brian T.; Johnson, Roger M.; Dickinson, Colin John, Abatement system having a plasma source.
  2. Bar Gadda,Ronny, Apparatus and method using a remote RF energized plasma for processing semiconductor wafers.
  3. Schuss, Jack J.; Chen, Xing, Applicators and cooling systems for a plasma device.
  4. Cox, Michael S.; Wang, Rongping; West, Brian T.; Johnson, Roger M.; Dickinson, Colin John, Capacitively coupled plasma source for abating compounds produced in semiconductor processes.
  5. Hoffman, Daniel J.; Carter, Daniel; Brouk, Victor; Peterson, Karen; Grilley, Randy, Capacitively coupled remote plasma source.
  6. Forbes Jones, Robin M.; Shaffer, Sterry A., Casting apparatus and method.
  7. Forbes Jones, Robin M.; Shaffer, Sterry A., Casting apparatus and method.
  8. Forbes Jones, Robin M.; Shaffer, Sterry A., Casting apparatus and method.
  9. Lagarde, Thierry Léon; Lacoste, Ana; Pelletier, Jacques; Arnal, Yves Alban Marie, Device for production of a plasma sheet.
  10. Wang, Yun-hai; Chen, Qing-yun; Li, Xiang-lin; Zhao, Jing-lian, Diamond-like carbon.
  11. Benjamin, Neil, Distributed power arrangements for localizing power delivery.
  12. Hoffman, Daniel J.; Carter, Daniel; Brouk, Victor; Peterson, Karen; Grilley, Randy, Electrostatic remote plasma source.
  13. Cox, Michael S.; Wang, Rongping; West, Brian T.; Johnson, Roger M.; Dickinson, Colin John, Hall effect enhanced capacitively coupled plasma source.
  14. Cox, Michael S.; Wang, Rongping; West, Brian T.; Johnson, Roger M.; Dickinson, Colin John, Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system.
  15. Heden,Craig R.; DePetrillo,Albert R.; McGuire,Robert M., Host and ancillary tool interface methodology for distributed processing.
  16. Chen, Xing, Inductively-coupled plasma source.
  17. Benjamin, Neil, Integrated steerability array arrangement for minimizing non-uniformity.
  18. Forbes Jones, Robin M., Ion plasma electron emitters for a melting furnace.
  19. Forbes Jones, Robin M.; Kennedy, Richard L., Melting furnace including wire-discharge ion plasma electron emitter.
  20. Forbes Jones, Robin M.; Kennedy, Richard L., Melting furnace including wire-discharge ion plasma electron emitter.
  21. Brouk, Victor; Heckman, Randy, Method and apparatus for controlling ion energy distribution.
  22. Forbes Jones, Robin M., Method and apparatus for producing large diameter superalloy ingots.
  23. Forbes Jones, Robin M., Method and apparatus for producing large diameter superalloy ingots.
  24. Brouk, Victor; Heckman, Randy; Hoffman, Daniel J., Method for controlling ion energy distribution.
  25. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel, Method of controlling the switched mode ion energy distribution system.
  26. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel, Method of controlling the switched mode ion energy distribution system.
  27. Cox, Michael S.; Wang, Rongping; West, Brian T.; Johnson, Roger M.; Dickinson, Colin John, Method of cooling a composition using a hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system.
  28. Jewett Russell F. ; Camus Curtis C., Methods and apparatus for igniting and sustaining inductively coupled plasma.
  29. DePetrillo,Albert R.; Heden,Craig R.; McGuire,Robert M., Modular ICP torch assembly.
  30. Polak, Scott; Carter, Daniel; Peterson, Karen; Grilly, Randy; Thornton, Mike; Hoffman, Daniel J., Plasma source device and methods.
  31. Kudela, Jozef; Tanaka, Tsutomu; Anwar, Suhail; Sorensen, Carl A.; White, John M., Plasma source with vertical gradient.
  32. Kennedy, Richard L.; Forbes Jones, Robin M., Processes, systems, and apparatus for forming products from atomized metals and alloys.
  33. Hoffman, Daniel J.; Carter, Daniel; Peterson, Karen; Grilley, Randy, Projected plasma source.
  34. Forbes Jones, Robin M.; Kennedy, Richard L.; Minisandram, Ramesh S., Refining and casting apparatus and method.
  35. Forbes Jones, Robin M.; Shaffer, Sterry A., Refining and casting apparatus and method.
  36. Forbes Jones, Robin M.; Shaffer, Sterry A., Refining and casting apparatus and method.
  37. Hoffman, Daniel J.; Carter, Daniel; Grilley, Randy; Peterson, Karen, Remote plasma source generating a disc-shaped plasma.
  38. Dandl, Raphael A., Slow-wave induction plasma transport.
  39. Brouk, Victor; Heckman, Randy; Hoffman, Daniel J., System, method and apparatus for controlling ion energy distribution.
  40. Hoffman, Daniel J.; Brouk, Victor; Carter, Daniel, System, method and apparatus for controlling ion energy distribution of a projected plasma.
  41. Hoffman, Daniel J.; Carter, Daniel; Brouk, Victor; Hattel, William J., Systems and methods for calibrating a switched mode ion energy distribution system.
  42. Carter, Daniel; Brouk, Victor; Hoffman, Daniel J., Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system.
  43. Holber, William M.; Chen, Xing; Cowe, Andrew B.; Besen, Matthew M.; Collins, Jr., Ronald W.; Trulli, Susan C.; Shao, Shouqian, Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel.
  44. Holber, William M.; Chen, Xing; Cowe, Andrew B.; Besen, Matthew M.; Collins, Jr., Ronald W.; Trulli, Susan C.; Shao, Shouquian, Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel.
  45. Holber,William M.; Chen,Xing; Cowe,Andrew B.; Besen,Matthew M.; Collins, Jr.,Ronald W.; Trulli,Susan C.; Shao,Shouqian, Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel.
  46. Chen, Xing; Pokidov, Ilya; Tian, Feng; Tran, Ken; Lam, David; Wenzel, Kevin W., Toroidal plasma abatement apparatus and method.
  47. Chen, Xing; Pokidov, Ilya; Tian, Feng; Tran, Ken; Lam, David; Wenzel, Kevin W., Toroidal plasma abatement apparatus and method.
  48. Brouk, Victor; Hoffman, Daniel J., Wafer chucking system for advanced plasma ion energy processing systems.
  49. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel; Kovalevskii, Dmitri, Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel.
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