초록 ▼

According to disclosed embodiments, a semiconductor memory (100) can include a restore voltage control circuit (106) that can supply a first internal voltage V.sub.INT that is lower than an external power supply voltage Vcc, a second internal voltage V.sub.INTS 1 that is lower than the first interna

According to disclosed embodiments, a semiconductor memory (100) can include a restore voltage control circuit (106) that can supply a first internal voltage V.sub.INT that is lower than an external power supply voltage Vcc, a second internal voltage V.sub.INTS 1 that is lower than the first internal voltage V.sub.INT, and a third internal voltage V.sub.INT 2 equal to or less than the first internal voltage V.sub.INT and greater than the second internal voltage V.sub.INTS 1. The semiconductor memory (100) can further include a p-channel MOS transistor (T108) that can provide a conductive path between a voltage supply path (116) and a sense amplifier (104) in response to a sense signal Se at the first internal voltage V.sub.INT. A switch signal generating circuit (112) can supply a switch signal Sw that can change the potential on the voltage supply path (116) from the second internal voltage V.sub.INTS 1 to the third internal voltage V.sub.INTS 2 while transistor T108 is conductive.

대표청구항 ▼

[ What is claimed is:] [1.] In a semiconductor memory that includes a plurality of memory cells arranged into matrix, the memory cells being situated at the vicinity of intersections of word lines and at least one bit line, and a sense amplifier that can receive voltages to read storage contents of

[ What is claimed is:] [1.] In a semiconductor memory that includes a plurality of memory cells arranged into matrix, the memory cells being situated at the vicinity of intersections of word lines and at least one bit line, and a sense amplifier that can receive voltages to read storage contents of a memory cell and restore storage contents from a memory cell that have been supplied to a bit line pair, the semiconductor memory comprising:voltage supply means for supplying a first internal voltage that is lower than an external power supply voltage, a second internal voltage that is lower than the first internal voltage, and a third internal voltage that can have a value in a range from the second internal voltage to the first internal voltage;switch means for providing a conductive path between a first node and the sense amplifier in response to a sense signal of the first internal voltage;change-over means for supplying the second internal voltage to the first node and subsequently changing the potential at the first node to the third internal voltage while the switch means provides the conductive path.