초록 ▼

A method is provided for cleaning exposed copper surfaces in damascene structures after chemical mechanical polishing of the copper. In a first embodiment exposed copper is annealed in a forming gas environment, a mixture of hydrogen and nitrogen, after chemical mechanical polishing, or other etchin

A method is provided for cleaning exposed copper surfaces in damascene structures after chemical mechanical polishing of the copper. In a first embodiment exposed copper is annealed in a forming gas environment, a mixture of hydrogen and nitrogen, after chemical mechanical polishing, or other etching means, is used to remove the copper down to the top of the trench dielectric. A layer of silicon nitride, SiN, is then immediately deposited, preferably in situ, over the exposed copper. In a second embodiment exposed copper is subjected to a plasma of NH.sub.3 after chemical mechanical polishing, or other etching means, is used to remove the copper down to the top of the trench dielectric. A layer of silicon nitride, SiN, is then immediately deposited in situ over the exposed copper. A layer of dielectric can then be deposited on the layer of silicon nitride and processing can be continued without contaminating or oxidizing the copper.

대표청구항 ▼

[ What is claimed is:] [1.] A method of passivating a copper damascene structure, comprising:providing a wafer having a layer of first dielectric formed thereon;etching trenches in said layer of first dielectric;depositing a layer of barrier metal on said layer of first dielectric and on all sides a

[ What is claimed is:] [1.] A method of passivating a copper damascene structure, comprising:providing a wafer having a layer of first dielectric formed thereon;etching trenches in said layer of first dielectric;depositing a layer of barrier metal on said layer of first dielectric and on all sides and bottoms of said trenches;depositing a layer of copper on said layer of barrier metal, thereby more than filling said trenches with copper;removing said copper and said barrier metal down to the level of the top of said layer of first dielectric thereby forming a damascene structure having exposed copper;annealing said copper in a reducing atmosphere after forming said damascene structure having exposed copper;depositing a layer of silicon nitride, SiN, on said wafer immediately after annealing said copper, thereby covering said first dielectric and said damascene structure having exposed copper with silicon nitride, SiN; andforming a layer of second dielectric on said layer of silicon nitride.