초록

A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an an 100 where lead serving as a crystallization-promoting catalyst is introduced.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a crystalline semiconductor film comprising silicon formed over an insulating surface, said crystalline semiconductor film being an active layer of a thin film transistor having at least one of channel, source, drain regions and containin

[ What is claimed is:] [1.] A semiconductor device comprising:a crystalline semiconductor film comprising silicon formed over an insulating surface, said crystalline semiconductor film being an active layer of a thin film transistor having at least one of channel, source, drain regions and containing a catalyst for promoting crystallization of silicon,wherein said catalyst is selected from group IV elements,wherein said channel region contains said catalyst at a concentration of 1.times.10.sup.15 -5.times.10.sup.19 atoms/cm.sup.3, andwherein said channel region comprises a plurality of crystals extending in a direction connecting said source and drain regions.