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Controlled cleavage process and resulting device using beta annealing

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
  • H01L-021/36
출원번호 US-0026118 (1998-02-19)
발명자 / 주소
  • Henley Francois J.
  • Cheung Nathan W.
출원인 / 주소
  • Silicon Genesis Corporation
대리인 / 주소
    Townsend and Townsend and Crew LLP
인용정보 피인용 횟수 : 77  인용 특허 : 101

초록

A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a

대표청구항

[ What is claimed is:] [1.] A process for forming a film of material from a substrate, said process comprising steps of:introducing particles through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a subst

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