초록 ▼

A semiconductor apparatus and a process for fabricating the same according to the invention permit reduction in width of a wiring pattern of the semiconductor apparatus and in distance between wiring elements. A stopper film and an insulating film are provided on a substrate. The etching rate of RIE

A semiconductor apparatus and a process for fabricating the same according to the invention permit reduction in width of a wiring pattern of the semiconductor apparatus and in distance between wiring elements. A stopper film and an insulating film are provided on a substrate. The etching rate of RIE for the insulating film is greater than that for the stopper film. The stopper film and insulating film are formed on the insulating film. A pattern of the contact hole is formed in the stopper film. A wiring pattern is formed on the resist film. The insulating films are etched by RIE with the resist film and stopper film used as masks. Thus, a groove for formation of wiring and a contact hole for formation of a contact plug are simultaneously formed in a self-alignment manner.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor apparatus comprising:a first conductive region provided at one of a region in a semiconductor substrate and a region on the semiconductor substrate;a second conductive region provided above the first conductive region;an interlayer insulating film provided

[ What is claimed is:] [1.] A semiconductor apparatus comprising:a first conductive region provided at one of a region in a semiconductor substrate and a region on the semiconductor substrate;a second conductive region provided above the first conductive region;an interlayer insulating film provided between the first and second conductive regions;an insulating protection film provided in the interlayer insulating film contacting with the first conductive region and having an etching rate different from that of the interlayer insulating film, the protection film having an opening region formed so that a tapered side wall remains at a corner defined by a bottom face and a side face of the opening region in the protection film;a contact hole penetrating the interlayer insulating film through the opening region in the protection film; anda conductor member for electrically connecting the first conductive region and the second conductive region via the contact hole and the opening region,wherein the contact hole penetrates the interlayer insulating film substantially vertically with respect to the semiconductor substrate, andthe opening region extends through the protection film substantially vertically with respect to the semiconductor substrate except the corner of the protection film.