초록 ▼

A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with

A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

대표청구항 ▼

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device comprising the steps of:forming a semiconductor film comprising amorphous silicon on an insulating surface of a substrate;providing a first selected portion of said semiconductor film with a catalyst material for promoting

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device comprising the steps of:forming a semiconductor film comprising amorphous silicon on an insulating surface of a substrate;providing a first selected portion of said semiconductor film with a catalyst material for promoting crystallization thereof;heating said catalyst material and said semiconductor film to crystallize said semiconductor film from said first selected portion horizontally with said insulating surface wherein said catalyst material diffuses into said semiconductor film during the crystallization;providing a second selected portion of the crystallized semiconductor film with a gettering material;heating the crystallized semiconductor film and the gettering material so that said catalyst material contained in the crystallized semiconductor film is moved therethrough in a direction parallel with a crystal growth direction in said heating step for the crystallization; and thenpatterning the crystallized semiconductor film to define an active region of the semiconductor device.