초록 ▼

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on t

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a peripheral circuit provided over a substrate; andan active matrix circuit provided over said substrate, d peripheral circuit comprising:a first semiconductor layer provided over said substrate in said peripheral circuit and having a fir

[ What is claimed is:] [1.] A semiconductor device comprising:a peripheral circuit provided over a substrate; andan active matrix circuit provided over said substrate, d peripheral circuit comprising:a first semiconductor layer provided over said substrate in said peripheral circuit and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; anda first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween,wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, andwherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and d active matrix circuit comprising:a second semiconductor layer provided over said substrate in said active matrix circuit and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region;a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; anda pixel electrode provided over said substrate and connected with said second region being more conductive than said second lightly doped region,wherein said second lightly doped region does not overlap with said second gate electrode.